TRANSISTOR WRS Search Results

transistor BF245

Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

SOT23 JEDEC standard orientation pad size

Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

2N2222A motorola

Abstract: BC237 H2A transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package

EQUIVALENT FOR zt751

Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for

MMFT6661T1

Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

BC237

Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for

MMBR930

Abstract: tc 1150b MRF911 equivalent 1150B motorola g18 MRF911 2N6604 BFR91 MRF914 motorola transistor 0063
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?254 0 0 1 4 1 5 1 3 • MOTb MOTOROLA ■ SEMICONDUCTOR - TECHNICAL DATA P 3 2N6604 Th e R F L in e NF * 2.7 dB « 1 .0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for use in high-frequency, low-noise, small-signal,

Contextual Info: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO

Contextual Info: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=47kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 198 WRs Q62702-C2266 1=B Package 3=C 2=E SOT-23

Q62702-C2283

Abstract: NOV27 BCR198W
Contextual Info: BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ, R2 = 47kΩ Type Marking Ordering Code Pin Configuration BCR 198W WRs 1=B Q62702-C2283 Package 2=E 3=C SOT-323

Q62702-C2266

Contextual Info: BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 198 WRs 1=B Q62702-C2266 Package 2=E 3=C SOT-23 Maximum Ratings

small signal transistor MOTOROLA

Abstract: w21 transistor MOTOROLA small signal transistor 2N3821JTX PHW4101 FIDL 5Bp transistor MOTOROLA TRANSISTOR
Contextual Info: MOTOROU Orderthis document by2N3621JTND SEMICONDUCTOR TECHNICAL DATA ● 2N3821JTX, JANS Processed per MlL4-19500/375 N4hannel, Depletion Mode Junction Field-Effect Transistor JFETs .designed for small-ignal, Iowoise amplifier applications. * ~,)> . .$$”

BCR198W

Abstract: VSO05561
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR198W

Abstract: VSO05561 MARKING WRS
Contextual Info: BCR198W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR198

Contextual Info: BCR198 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR198

Abstract: MARKING WRS
Contextual Info: BCR198 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR198 WRs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: BCR 198 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 198 WRs Pin Configuration 1=B 2=E Package 3=C SOT-23

Transistor WRS

Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W WRS SOT363
Contextual Info: BCR198./SEMB2 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

Contextual Info: BCR198./SEMB2 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

SOt323 marking code 6X

Abstract: BCR198 BCR198W
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

BC237

Abstract: mps4123 opposite transistor BC107 specifications MPS3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor transistor 2n5551 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage VCES

BC237

Abstract: BC108 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA96T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 450 Vdc Collector–Base Voltage VCBO – 450 Vdc Emitter–Base Voltage