TRANSISTOR WORKING Search Results

AN3025

Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Contextual Info: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace

advantage and disadvantage of igbt

Abstract: HFBR1531Z HFBR-1522ETZ
Contextual Info: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence

Contextual Info: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.

RN1907FS

Abstract: RN1909FS RN2907FS RN2908FS RN2909FS
Contextual Info: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.

RN1544

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • • Unit: mm Emitter-base voltage is high: VEBO = 25 V (max) Incorporating a bias resistor into a transistor reduces parts count.

3Kp Transistor

Abstract: BCV62A two transistor forward BCV61 BCV62 BCV62B BCV62C 3LP Transistor
Contextual Info: fc.bS3T31 002M547 GEb H A P X N AUER PHILIPS/DISCRETE BCV62; 62A BCV62B; 62C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SO T-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.

Contextual Info: • bbSBTBl 00E4S43 460 ■ A P X N AMER PHILIPS/DISCRETE BCV61; 61A BCV61B: 61C b7E D SILICON PLANAR EPITAXIAL TRANSISTOR Double n-p-n transistor, in SOT-143 plastic envelope, designed for use in applications where the working point must be independent o f temperature.

Contextual Info: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS 0.33±0.05 0.05 M A 2.4±0.1 DC-DC CONVERTER APPLICATIONS ・Multi-chip discrete device; built-in NPN transistor for main switch and

ALG TRANSISTOR

Contextual Info: bbSB'lBl Q024547 02b * A P X N AflER PHILIPS/DISCRETE b7E D _ J BCV62; 62A BCV62B; 62C V SILICON PLANAR EPITAXIAL TRANSISTOR Double p-n-p transistor, in SOT-143 plastic envelope, designed for use in applications where the working p oint must be independent o f temperature.

RN1961FE

Abstract: RN1966FE RN2961FE RN2962FE RN2963FE RN2964FE RN2965FE RN2966FE
Contextual Info: RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2961FE, RN2962FE, RN2963FE RN2964FE, RN2965FE, RN2966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

RN1901FE

Abstract: RN1902FE RN1903FE RN1904FE RN1905FE RN1906FE RN2901FE RN2906FE transistor marking xf
Contextual Info: RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

TRANSISTOR MARKING YB

Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

Contextual Info: RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Contextual Info: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1961FE

Abstract: RN1962FE RN1963FE RN1964FE RN1965FE RN1966FE RN2961FE RN2966FE all type transistor equivalent
Contextual Info: RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1961FE, RN1962FE, RN1963FE RN1964FE, RN1965FE, RN1966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

RN1101FT

Abstract: RN1102FT RN1103FT RN1104FT RN1105FT RN1106FT RN2101FT
Contextual Info: RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

TRANSISTOR MARKING YB

Abstract: RN2101FT RN1101FT RN2102FT RN2103FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT, RN2102FT, RN2103FT RN2104FT, RN2105FT, RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

RN2104FS

Abstract: RN2101FS RN2105FS RN1101FS RN1106FS RN2102FS RN2103FS RN2106FS
Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05

Contextual Info: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm