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    TRANSISTOR WITH GAIN 10 Search Results

    TRANSISTOR WITH GAIN 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295
    Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU PDF
    GRJ55DR7LV474KW01K
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose PDF
    GRJ43DR7LV224KW01L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose PDF
    GRJ43QR7LV154KW01L
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose PDF
    GRJ43QR7LV154KW01K
    Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose PDF

    TRANSISTOR WITH GAIN 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


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    MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 PDF

    Contextual Info: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)


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    BCX17 BCX17 R1120A PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


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    MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    2SC5800

    Abstract: NESG2046M33
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


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    PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 PDF

    DUAL TRANSISTOR

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.


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    OT-363 QW-R218-024 DUAL TRANSISTOR PDF

    2STX2220

    Abstract: JESD97 X2220
    Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description


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    2STX2220 2002/93/EC X2220 2STX2220 JESD97 X2220 PDF

    npn transistor 400 volts.10 amperes

    Contextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar


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    MJE18004D2 MJE18004D2 npn transistor 400 volts.10 amperes PDF

    2STF2220

    Abstract: JESD97 P025H STMicroelectronics marking code date sot-89
    Contextual Info: 2STF2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description


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    2STF2220 2002/93/EC OT-89 2STF2220 JESD97 P025H STMicroelectronics marking code date sot-89 PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG PDF

    D42DG

    Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 PDF

    d1589

    Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • High gain with low operating current


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    PPA827TF 2SC5179) PPA827TF-T1 d1589 transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMT1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc.


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    OT-363 QW-R218-025 PDF

    NE661M05

    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


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    NE661M05 NE661M05-T1 PU10323EJ02V0DS NE661M05 PDF

    18004D2

    Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
    Contextual Info: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar


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    MJB18004D2T4 MJB18004D2T4 18004D2 r14525 MJB18004D2T4/D 18004D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package PDF

    2STP535

    Abstract: ST DARLINGTON TRANSISTOR 2STP535FP alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic
    Contextual Info: 2STP535FP NPN power Darlington transistor Features • Monolithic Darlington transistor with integrated antiparallel collector-emitter diode ■ Very high DC current gain Applications ■ Electronic ignition ■ AC-DC motor control ■ Alternator regulator


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    2STP535FP O-220FP 2STP535FP O-220FP 2STP535 ST DARLINGTON TRANSISTOR alternator ic connection Alternator Voltage Regulator Darlington alternator voltage regulator schematic PDF

    LM295

    Abstract: LM195 LP395 LP395Z Z03A LIMITING INRUSH CURRENT npn
    Contextual Info: LP395 Ultra Reliable Power Transistor General Description The LP395 is a fast monolithic transistor with complete overload protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from almost


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    LP395 LP395 LM295 LM195 LP395Z Z03A LIMITING INRUSH CURRENT npn PDF

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


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    2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B PDF

    2SC5436

    Abstract: 2SC5800 low vce transistor
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TS 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 low vce transistor PDF

    2SC5435

    Abstract: 2SC5600 IC 14558 5mA25
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor


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    PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25 PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


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    PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS PDF

    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


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    PA863TS 2SC5436, 2SC5800) 2SC5436 2SC5800 PU10333EJ02V0DS PDF

    2SC5603

    Abstract: 2SC5676
    Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor


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    PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676 PDF