TRANSISTOR WITH GAIN 10 Search Results
TRANSISTOR WITH GAIN 10 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LBAA0QB1SJ-295 | Murata Manufacturing Co Ltd | SX1262 MODULE WITH OPEN MCU | |||
GRJ55DR7LV474KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43DR7LV224KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose | |||
GRJ43QR7LV154KW01K | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose |
TRANSISTOR WITH GAIN 10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
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MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 | |
Contextual Info: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm) |
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BCX17 BCX17 R1120A | |
18002D2Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain |
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MJD18002D2 MJD18002D2 18002D2 | |
MJD18002D2
Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
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MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 | |
Contextual Info: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to |
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BUL642D2 BUL642D2 | |
Contextual Info: PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current |
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2SC5507 2SC5507-T2 Rn/50 P13864E 13864E J1V0DS00 | |
bul45d2g
Abstract: BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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BUL45D2G BUL45D2G BUL45D2/D BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
BCX17
Abstract: BCX19 T116
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BCX17 BCX19. BCX17 BCX19 T116 | |
NESG2046M33
Abstract: NESG2107M33
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PA880TS NESG2046M33, NESG2107M33) S21e2 NESG2046M33 NESG2107M33 NESG2046M33 NESG2107M33 | |
transistor NEC B 617
Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
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2SC5336 2SC3357 2SC5336-T1 transistor NEC B 617 nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617 | |
2SC5800
Abstract: NESG2046M33
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PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 | |
DUAL TRANSISTORContextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. |
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OT-363 QW-R218-024 DUAL TRANSISTOR | |
2STX2220
Abstract: JESD97 X2220
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2STX2220 2002/93/EC X2220 2STX2220 JESD97 X2220 | |
npn transistor 400 volts.10 amperesContextual Info: ON Semiconductor MJE18004D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state−of−art High Speed High gain BIPolar |
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MJE18004D2 MJE18004D2 npn transistor 400 volts.10 amperes | |
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2STF2220
Abstract: JESD97 P025H STMicroelectronics marking code date sot-89
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2STF2220 2002/93/EC OT-89 2STF2220 JESD97 P025H STMicroelectronics marking code date sot-89 | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG | |
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
d1589
Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
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PPA827TF 2SC5179) PPA827TF-T1 d1589 transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. |
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MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010. | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMT1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMT1N is a dual transistor, including two PNP transistors. It uses UTC’s advanced technology to provide the customers with high DC current gain, etc. |
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OT-363 QW-R218-025 | |
High Voltage Switching Transistor
Abstract: MMDT5551
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MMDT5551 MMDT5551 MMDT5551L-AL6-R MMDT5551G-AL6-R OT-363 QW-R218-022 High Voltage Switching Transistor | |
S 9012 H 331 transistor
Abstract: s 9013 c 331 transistor Ic fr 9888 ic 9399 g NEC 14324 UPA827TF S 9013 H 331 transistor NEC 8701 transistor 9013 H NPN IC 7409
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uPA827TF 2SC5179) tPA827TF S 9012 H 331 transistor s 9013 c 331 transistor Ic fr 9888 ic 9399 g NEC 14324 S 9013 H 331 transistor NEC 8701 transistor 9013 H NPN IC 7409 | |
NE661M05Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz |
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NE661M05 NE661M05-T1 PU10323EJ02V0DS NE661M05 |