TRANSISTOR WAF Search Results

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: S11A1 Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

T8550

Abstract: T8050 transistor t8050 transistor NPN TO-92 2W
Contextual Info: Preliminary Specification RCL Semiconductors Ltd. T8050 NPN Medium Power Transistor GENERAL DESCRIPTION T8050 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550. It can be widely used in audio amplifiers and switching.

high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

Abstract: Glossary of Microwave Transistor Terminology
Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .

IC 7555 datasheet

Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G
Contextual Info: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

T3904

Abstract: T3906
Contextual Info: Preliminary Specification RCL Semiconductors Ltd. T3904 NPN Switching Transistor GENERAL DESCRIPTION . T3904 is NPN small power and high frequency transistor fabricated on the epitaxial silicon wafers. It is complimentary to T3906. It can be widely used in amplifiers and switching.

pspice

Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
Contextual Info: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

10GHz oscillator

Abstract: Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ HFA3102 UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B
Contextual Info: HFA3102 TM Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

H3101B

Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

T8550

Abstract: T8050 transistor t8050
Contextual Info: Preliminary Specification RCL Semiconductors Ltd. T8050-1 NPN Medium Power Transistor GENERAL DESCRIPTION T8050-1 is NPN medium power transistor fabricated on the epitaxial silicon wafers. It is complimentary to T8550-1. It can be widely used in audio amplifiers and switching.

smd transistor 304

Abstract: ISL73096RHVX AN9315 "PNP Transistor array" fabrication GAMMA Radiation Detector TRANSISTOR PNP 5GHz 5962F0721801V9A ISL73096RH smd transistor pinout pnp 8 transistor array
Contextual Info: ISL73096RH Data Sheet March 29, 2007 Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer,

HFA3102BZ96

Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G
Contextual Info: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

HFA3101

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Contextual Info: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

transistor npn c 9012

Abstract: HFA3101BZ 5GHz band pass filter
Contextual Info: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

data sheet transistor 9018 NPN

Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G 12E-09
Contextual Info: HFA3102 TM Data Sheet September 2001 File Number 3635.3 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

kf 8715

Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
Contextual Info: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

Contextual Info: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Rev. V1 Features •       MAGX-000025-150000 GaN on SiC Transistor Technology Broadband Unmatched Transistor Common-Source Configuration +50 V Typical Operation Class AB Operation

high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

HFA3101

Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
Contextual Info: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while

CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

8054 transistor

Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

AT41500

Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

AT-41500

Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be