TRANSISTOR W 04 59 Search Results

Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

BLL6H0514-25

Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP 2541 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V

B1204

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5900RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to 100K RAD Ultra Low Dropout for Reduced Power Consumption

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption

CA3095E

Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
Contextual Info: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption

37ie

Abstract: RESISTOR POTENTIOMETER APEX pa21
Contextual Info: ISO-9001 CERTIFIED BY DSCC DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/184 M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier

apex pa26

Abstract: APEX pa21 PA26 audio amp MSK184 PA26 transistor smd 183 NV SMD TRANSISTOR MSK182 MSK183 MSK185
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/ 184/185 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: MSK185 Replaces APEX PA26 MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

Contextual Info: h 7 > V * * /Transistors UMZ2N IMZ2A UMZ2N/IMZ2A Isolated Mini-Mold Device /General Small Signal Amp. • ft« • ^ • \f'jil2 /D im e n s io n s U n it: mm 1) UM T (SC-70), SM T (SC-59) ¿ i l - 2« 0 b ÿ > ' J X 9 1 f A -o X I'Z o 2) UM T, SM T « * iw r i7 * s .

Contextual Info: FOR REVIEW ONLY 5962F1023504K IRUH330125AK Radiation Hardended Ultra Low Dropout IRUH330125AP Fixed Positive Linear Regulator +3.3VIN to +2.5VOUT @3.0A Product Summary Part Number IRUH330125AK IRUH330125AP Dropout IO VIN VOUT 0.4V 3.0A 3.3V 2.5V 8-LEAD FLAT PACK

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 May 17 2002 Jul 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A

transistor 2222

Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X

TRANSISTOR CATALOGUE

Abstract: "MARKING CODE S4" BC548 MGD415
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X

Contextual Info: RF Power Field Effect Transistor LDMOS, 2110—2170 MHz, 2W, 28V 7/9/04 MAPLST2122-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase

200 Ampere power transistor

Abstract: 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN
Contextual Info: Silicon Power Transistor Features: • • • • Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE Sat = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.

BLF861

Abstract: BLF861A UT70 821 ceramic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

BSV64

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64

Contextual Info: AC-DC 400-2500 Watts fleXPower Series xppower.com • Configurable for Fast Time to Market • SEMI F47 Compliant • Flexible Series & Parallel Capability • -20 °C Operation • Extra Power Available at High Line • Optional Fan Speed Control • 3 Year Warranty

darlingtion transistor 2 amp

Abstract: TIP150 NPN Transistor 50A 400V
Contextual Info: Transistor Features: • Collector-Emitter Sustaining Voltage VCEC SUS = 30V (Minimum) • Collector-Emitter Saturation Voltage VCE (sat) = 2.0V (Maximum) at IC = 5.0 A • Reverse-Base SOA - 300V to 400V at 7A Dimensions Minimum Maximum A 14.68 15.31 B