TRANSISTOR VN Search Results

MRC165

Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of FHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

BUK456

Abstract: BUK456-800B Buk456800b BUK456-800A T0220AB buk456 800
Contextual Info: Philips Components BUK456-800A BUK456-800B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is Intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK437-500A

Abstract: BUK437-500B buk437 S1216
Contextual Info: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK453-50B

Abstract: BUK453-50A R2d DIODE BUK453 T0220AB buk453 50B
Contextual Info: BUK453-50A BUK453-50B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: BUF742 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 00307b0 bbD * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

A65 smd transistor

Abstract: transistor smd za
Contextual Info: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •

Contextual Info: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

2508D

Abstract: BU2508D
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BÜ2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

vp 3082

Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,

s00b

Abstract: PQZ1
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

IRF23N15

Abstract: AN169 MJD340 39A zener diode
Contextual Info: X80070, The Flexible -48V Hot Swap Solution Application Note May 4, 2005 AN169.0 Author: Carlos Martinez Overview zener diode controlling the base of a pass transistor to provide a regulated 12V. With the transistor, a minimum current through the zener provides regulation, while the

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6519 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

ds7830j

Abstract: DS7830 J14A DUAL Differential Line DRIVER
Contextual Info: DS7830 Dual Differential Line Driver General Description Features The DS7830 is a dual differential line driver that also performs the dual four-input NAND or dual four-input AND function. TTL Transistor-Transistor-Logic multiple emitter inputs allow this line driver to interface with standard TTL systems.

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

DIODE B97

Abstract: BUK446-800A BUK446-800A application BUK476 BUK476-800A BUK476-800B 3909
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 - 3 9 - 0 ? BUK 476-800A/B PowerMOS transistor R e p laces B U K 44 6-8 00 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse