TRANSISTOR VCE 1000V Search Results

FZT696B

Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8

ir igbt 1200V 40A

Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Contextual Info: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package

IRG4PH40S

Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V

IRG4PH40S

Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V

transistor A55

Abstract: mount transistor A55 IRG4PH40
Contextual Info: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V

Contextual Info: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E

transistor TO-3P Outline Dimensions

Contextual Info: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant

Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C

TRANSISTOR N 1380 600 300 SC

Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Contextual Info: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

mosfet 1200V 40A

Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

IXBF

Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000

GT15N101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT15N101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15,9 MAX Zi3.2±a2 . High Input Impedance . High Speed : tf=l.Oils Max. ) . Low Saturation Voltage ; VcE(sat)=5.0V(Max.)

mosfet 1200V 40A

Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
Contextual Info: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

P channel 600v 20a IGBT

Abstract: HF40D120ACE IRGP20B120U-E
Contextual Info: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C