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    TRANSISTOR VARIABLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR VARIABLE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC1425

    Abstract: 2SC1041 F14C 2SC1118 transistor oscillator circuit Transistor Class AB Audio Power Amplifier Application Note 2Sd288 2SD28 transistor oscillator microwave semiconductor corporation rf power transistor
    Contextual Info: USER’S MANUAL NEC DEGRADATION OF I if e OF TRANSISTOR OSCILLATOR AND COUNTERMEASURES As microwave transistors have made progress in recent years, many L-C band transistor oscillators have been used. Transistor oscillators have a wide variable frequency range, low residual FM noise, and simple power circuit


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    2sc14252sc1041f14c2sc1118+6transistor oscillator circuittransistor class ab audio power amplifier application note2sd2882sd28transistor oscillatormicrowave semiconductor corporation rf power transistor PDF

    motorola transistor ignition

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR


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    bu323ap340d-01motorola transistor ignition PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


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    bu323apr14525bu323ap/d1n4001 transistor free+7bc337 figure1n4001bc337bu323psilicon diode 1n4001 specificationstransistor bc337transistor darlington npn PDF

    BC337 rbe

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
    Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


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    bu323apr14525bu323ap/dbc337 rbe+5bc337 figure1n4001bc337bu323pdiode 1n4001 voltage limitations PDF

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzs11a1glossary of microwave transistor terminology PDF

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Contextual Info: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


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    5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzglossary of microwave transistor terminology PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    bud42dbud42d/d369dbud42dt4+3mpf930mtp8p10mur105 PDF

    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    bud42dd42dgbud42d/d PDF

    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    bud42dbud42d/d PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    bud42dbud42d/d369dbud42dt4+5mpf930mtp8p10mur105l4 marking code dioded42dg PDF

    D42DG

    Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    bud42dbud42d/dd42dgbud43d transistor+5369dbud42dt4mpf930mtp8p10mur105 PDF

    transistor ic1A

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „


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    5302d5302dl5302dg5302d-tm3-t+55302dl-tm3-t5302dg-tm3-to-251qw-r213-018transistor ic1a PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


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    5302dot-2235302dg-aa3-r5302dl-t60-k+55302dg-t60-ko-1265302dl-t92-b5302dg-t92-b5302dl-t92-k PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


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    5302d5302dl-aa3-r5302dg-aa3-r5302dl-t60-k+55302dg-t60-k5302dl-t92-b5302dg-t92-b5302dl-t92-k5302dg-t92-k PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR „ DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. „ 1 TO-251 FEATURES * Makes efficient anti-saturation operation


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    o-2515302l-tm3-t5302g-tm3-tqw-r213-020 PDF

    BUD43D2

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
    Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    bud43d2r14525bud43d2/dmje210+5mpf930mtp12n10mtp8p10mur105smd310 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302do-251o-252o-126+55302dl-t60-k5302dg-t60-k5302dl-t92-b5302dg-t92-b5302dl-t92-k PDF

    5302D

    Abstract: 5302D-TM3-T 5302DL
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302do-251o-1265302dl+55302dg5302d-t60-t5302d-tm3-t5302dl-tm3-t5302dl-t60-t PDF

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    bud43d2r14525bud43d2/dmtp8p10+4mur105mje210mpf930mtp12n10 PDF

    high power FET transistor s-parameters

    Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
    Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .


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    atp-10545963-2025e5966-0779ehigh power fet transistor s-parameters+6high frequency transistor ga as fetbipolar transistor ghz s-parameternf50rf transistor s-parametervacuum tube amplifierdc bias of gaas fet PDF

    5302D

    Abstract: 5302DL
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. „ FEATURES


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    5302do-251o-1265302dl-t60-k+65302dg-t60-k5302dl-t92-b5302dg-t92-b5302dl-t92-k5302dg-t92-k5302dl PDF

    npn transistor 400 volts.10 amperes

    Contextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    bud43d2r14525bud43d2/dnpn transistor 400 volts.10 amperes PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. „ FEATURES * Internal free-wheeling diode


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    5302d5302dl-t60-k5302dg-t60-k5302dl-t92-b+55302dg-t92-b5302dl-t92-k5302dg-t92-k5302dl-t92-r5302dg-t92-r PDF