TRANSISTOR VARIABLE Search Results
TRANSISTOR VARIABLE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR VARIABLE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2SC1425
Abstract: 2SC1041 F14C 2SC1118 transistor oscillator circuit Transistor Class AB Audio Power Amplifier Application Note 2Sd288 2SD28 transistor oscillator microwave semiconductor corporation rf power transistor
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2sc14252sc1041f14c2sc1118+6 | |
motorola transistor ignitionContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR |
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bu323ap340d-01motorola transistor ignition | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
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bu323apr14525bu323ap/d1n4001 transistor free+7 | |
BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
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bu323apr14525bu323ap/dbc337 rbe+5 | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: S11A1 Glossary of Microwave Transistor Terminology
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5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzs11a1glossary of microwave transistor terminology | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: Glossary of Microwave Transistor Terminology
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5966-3085ehigh-frequency pnp and npn transistors with transition frequencies above 5 ghz and 9 ghzglossary of microwave transistor terminology | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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bud42dbud42d/d369dbud42dt4+3 | |
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Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic |
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bud42dd42dgbud42d/d | |
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Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic |
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bud42dbud42d/d | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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bud42dbud42d/d369dbud42dt4+5 | |
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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bud42dbud42d/dd42dgbud43d transistor+5 | |
transistor ic1AContextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. |
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5302d5302dl5302dg5302d-tm3-t+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES |
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5302dot-2235302dg-aa3-r5302dl-t60-k+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES |
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5302d5302dl-aa3-r5302dg-aa3-r5302dl-t60-k+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. 1 TO-251 FEATURES * Makes efficient anti-saturation operation |
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o-2515302l-tm3-t5302g-tm3-tqw-r213-020 | |
BUD43D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
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bud43d2r14525bud43d2/dmje210+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES |
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5302do-251o-252o-126+5 | |
5302D
Abstract: 5302D-TM3-T 5302DL
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5302do-251o-1265302dl+5 | |
MTP8P10
Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
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bud43d2r14525bud43d2/dmtp8p10+4 | |
high power FET transistor s-parameters
Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
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atp-10545963-2025e5966-0779ehigh power fet transistor s-parameters+6 | |
5302D
Abstract: 5302DL
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5302do-251o-1265302dl-t60-k+6 | |
npn transistor 400 volts.10 amperesContextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally |
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bud43d2r14525bud43d2/dnpn transistor 400 volts.10 amperes | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode |
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5302d5302dl-t60-k5302dg-t60-k5302dl-t92-b+5 | |