TRANSISTOR VARIABLE Search Results
TRANSISTOR VARIABLE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR VARIABLE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SC1425
Abstract: 2SC1041 F14C 2SC1118 transistor oscillator circuit Transistor Class AB Audio Power Amplifier Application Note 2Sd288 2SD28 transistor oscillator microwave semiconductor corporation rf power transistor
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motorola transistor ignitionContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR |
OCR Scan |
BU323AP 340D-01 motorola transistor ignition | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
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BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn | |
BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
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BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: S11A1 Glossary of Microwave Transistor Terminology
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5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology | |
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz
Abstract: Glossary of Microwave Transistor Terminology
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5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic |
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BUD42D D42DG BUD42D/D | |
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic |
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BUD42D BUD42D BUD42D/D | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG | |
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
transistor ic1AContextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. |
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5302D 5302D 5302DL 5302DG 5302D-TM3-T 5302DL-TM3-T 5302DG-TM3-T O-251 QW-R213-018. transistor ic1A | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES |
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5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES |
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5302D 5302D 5302DL-AA3-R 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION The UTC 5302 is a NPN silicon planar transistor and suited to be used in power amplifier applications. 1 TO-251 FEATURES * Makes efficient anti-saturation operation |
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O-251 5302L-TM3-T 5302G-TM3-T QW-R213-020 | |
BUD43D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
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BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE 1 DESCRIPTION TO-251 The UTC 5302D are series of NPN silicon planar transistor with diode, and its suited to be used in power amplifier applications. FEATURES |
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5302D O-251 5302D O-252 O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K | |
5302D
Abstract: 5302D-TM3-T 5302DL
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5302D O-251 5302D O-126 5302DL 5302DG 5302D-T60-T 5302D-TM3-T 5302DL-TM3-T 5302DL-T60-T 5302D-TM3-T 5302DL | |
MTP8P10
Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
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BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10 | |
high power FET transistor s-parameters
Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
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ATP-1054, 5963-2025E 5966-0779E high power FET transistor s-parameters high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET | |
5302D
Abstract: 5302DL
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5302D O-251 5302D O-126 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL | |
npn transistor 400 volts.10 amperesContextual Info: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally |
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BUD43D2 BUD43D2: r14525 BUD43D2/D npn transistor 400 volts.10 amperes | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode |
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5302D 5302D 5302DL-T60-K 5302DG-T60-K 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K 5302DG-T92-K 5302DL-T92-R 5302DG-T92-R |