TRANSISTOR U31 Search Results

Contextual Info: SUR503EF ㅜ Semiconductor Epitaxial planar NPN silicon transistor Description • Dual chip digital transistor Features • Two SRC1206 chips in SOT-563F package • Simplify circuit design • Reduce a quantity of parts and manufacturing process Ordering Information

MPS-U31

Abstract: MPSU31 MOTOROLA an-596 DOW 340 MPS8000 an-596 MPS8001 5659065-3B MPS-U31-1
Contextual Info: MPS-U31 SILICON NPN SILICON ANNULAR 3.5 W - 27 MHz RF TRANSISTOR RF POWER OUTPUT TRANSISTOR . . . designed for use in Citizen-Band and other high-frequency com­ munications equipm ent operating to 30 M H z. Higher breakdown voltages allow a high percentage o f up-m odulation in A M circuits.

9945a

Abstract: ic 9945 a 8 pin ci 9933 b 9945 A transistor 9945 A 9962 GH cx 3120 inverter circuit diagram 9936 9936 GN diode 9948
Contextual Info: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT 0 °C TO 7 5 °C TEM PERATURE RANGE GENERAL DESCRIPTION— Fairchild Diode Transistor Micrologic DT/j L Integrated Circuits family uses

ic 9945 a 8 pin

Abstract: 9945 A transistor ic 9945 a 4 pin L9944 diode 9948 LT 9949 fairchild micrologic 3m 9962 9932 DTL fairchild 9946
Contextual Info: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRO DUCT 0°C TO 75°C TEM PERATURE RAN GE GENERAL DESCRIPTION — Fairchild Diode Transistor Micrologic DT/iL Integrated Circuits family uses

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: ㅇ SBT2907F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222F

on semiconductor marking code 2F

Abstract: marking 2F SBT2907A
Contextual Info: ㅇ SBT2907A Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222A

SBT2907AU

Contextual Info: ㅇ SBT2907AU Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU

Contextual Info: ㅇ SBT2907 Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222

Contextual Info: ㅇ SBT2907AF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AF

MARKING F2

Abstract: SBT2907AU
Contextual Info: ㅇ SBT2907AUF Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2222AU

STC5551F

Contextual Info: ㅊ 9+ STC5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.)

U310

Contextual Info: 9 -9 7 B 67 U310 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at T* = 25°C. • OSCILLATOR Reverse Gate Source & Reverse Gate Drain Voltage • VHF/UHF AMPLIFIER Continuous Forward Gate Current Continuous Device Power Dissipation

Contextual Info: Jsii.su <~>£.m.i-L.onaucitoi L/-* 10 duct ±, One. £s t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 N-Channel Silicon Junction Field-Effect Transistor • Mixer • Oscillator • VHF/UHF Amplifier

U310

Abstract: SMPJ310 transistor u310
Contextual Info: Databook.fxp 1/14/99 11:33 AM Page B-67 B-67 01/99 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

U311

Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

Contextual Info: B 68 9-97 U311 N -C H A N N E L SILIC O N JU N CTIO N FIELD-EFFECT TRANSISTOR • MIXER • OSCILLATOR VHF/UHF AMPLIFIER Absolute maximum ratings at Ta = 25'C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

STU310DH

Abstract: TO-252-4L stu310
Contextual Info: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

stu312d

Abstract: stu312 U312D 312d pf 312D STU31
Contextual Info: S T U312D Green Product S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID

Contextual Info: 4fl2bêflô 0 0 0 0 2 3 1 h • 2bE D INTER F E T CORP - r - 3 i-a .5 B39 U311 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VHF AMPLIFIERS • OSCILLATORS • MIXERS absolute m axim u m ratings at 25°C free-air temperature Gate-Drain or Gate-Source V o lt a g e .

J310

Abstract: Transistor J310 J310 equivalent U310 J309 13000 BR transistor transistor u310 U309 N-Channel JFET transistor j309 transistor
Contextual Info: U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 MMBFJ309 MMBFJ310 /V s U T L /G /1 0 1 0 0 -9 TO-236 SOT-23 TO*M T L/G /10100 -6 G T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor for RF Amplifiers Electrical Characteristics t a

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle