TRANSISTOR TL Search Results

MCT8 opto

Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Contextual Info: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

CA3083

Abstract: pspice high frequency transistor ca3096 transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor
Contextual Info: CA3096 and CA3083 Transistor Array SPICE Models TM July 1997 tle 9 30 nd 08 anr y E - MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2n2222 2n5401 2n5551

Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

Philips film capacitors 27 pf

Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized

CI Z 131 R-10

Abstract: BLW87 h a 431 transistor transistor L6
Contextual Info: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is

MJE2955

Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

motorola transistor ignition

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR

E67349

Abstract: TLP330
Contextual Info: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

E67349

Abstract: TLP630
Contextual Info: TOSHIBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

transistor tic 106

Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has

E67349

Abstract: TLP572
Contextual Info: TOSHIBA TLP572 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS IRED & PHOTO-TRANSISTOR TLP572 AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared emitting

E67349

Abstract: TLP572
Contextual Info: TLP572 TOSHIBA Photocoupler IRED & Photo-Transistor TLP572 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP572 consists of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting

BC337 rbe

Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Contextual Info: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP124 TENTATIVE DATA PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP124 is a srrnll outline coupler, suitable for surface mount assembly. TLP124 consists of a photo transistor, optically

P 131 GB

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP121 OFFICE MACHINE. PROGRAMMABLE CONTROLLERS. AC/DC-INPUT MODULE. TELECOMMUNICATION. The TOSHIBA MINIFLAT COUPLER TLP121 is a smr.ll outline coupler, suitable for surface mount assembly. TLP121 consists of a photo transistor- optically

tlp721

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP721 DATA GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled

TLP572

Abstract: E67349
Contextual Info: TLP572 TOSHIBA Photocoupler IRED & Photo-Transistor TLP572 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP572 consists of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting

74286

Abstract: UL1577 E67349 TLP733 TLP733F TLP734 TLP734F
Contextual Info: TOSHIBA TLP733FJLP734F TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733F, TLP734F OFFICE MACHINE SWITCHING POWER SUPPLY The TOSHIBA TLP733F and TLP734F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe