TRANSISTOR THE 6 MHZ Search Results

2224-6L

Contextual Info: 2224-6L 6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz GENERAL DESCRIPTION The 2224-6L is a COMMON BASE transistor capable of providing 6 Watts, Class C output power over the band 2200-2400 MHz. The transistor includes input prematching for full Broadband capability. Gold metalization and

1417 transistor

Abstract: max 1417 1417-6A
Contextual Info: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications

transistor Y2

Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Contextual Info: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.

PTB 20181

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power

Contextual Info: ERICSSON PTB 20051 6 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20051 is a class A, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14651513 MHz frequency band. It is rated at 6 Watts minimum

PTB20144

Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • The 20144 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output

1014-6A

Contextual Info: 1014-6A 6 Watts, 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LV-1 The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1000-1400 MHz band. This transistor is specifically designed for microwave broadband applications.

Contextual Info: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

1014-6A

Contextual Info: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

transistor Y2

Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

JOHANSON 2951

Abstract: MRF5174 IR 21025 8ASF U028
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 2W - 4 0 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON .d e s ig n e d prim arily for w ideband large-signal driver and pre­ driver am plifier stages in the 2 6 0 -6 0 0 M H z frequency range.

transistor Y4

Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
Contextual Info: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at

sot23-6 package marking d619

Abstract: marking D619 d619 zxtd09n50de6ta
Contextual Info: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

d619

Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Contextual Info: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

FMBA0656

Abstract: transistor marking E2 Supersot 6 transistor marking c1
Contextual Info: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

PTB 20181

Contextual Info: e PTB 20181 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

transistor R1d

Abstract: ericsson 20144
Contextual Info: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

20258

Abstract: IEC-68-2-54 1301P
Contextual Info: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

20144

Abstract: IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

MPSA06 transistor

Abstract: MPSA56 TRANSISTOR
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA06 Small Signal Transistors NPN TO-92 0.181 (4 .6 ) FEATURES 0 .1 4 2 ( 3 . 6 ) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MPSA56 is recommended.