TRANSISTOR TE 901 Search Results

JE9013

Abstract: JE9012 92PA3
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9013 DESCRIPTION The JE 9013 is designed fo r use in 1 W o u tp u t a m p lifie r o f PACKAGE DIMENSIONS portable radios in class B push-pull operation. in m illim e te rs inches 5.2 MAX. (0.204 MAX.! FEATURES

2SC950

Abstract: 2SC951 2sc950 transistor 2SA573 2SA574
Contextual Info: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .

JE9014

Abstract: GE-45
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9014 DESCRIPTIO N The JE 9014 is designed fo r use in pre-am plifier o f low level PAC KAG E D IM EN SIO N S in m illim e te rs inches and low noise. FE A TU R E S • 5.2 MAX. High to ta l power dissipation. ( P j : 625 mW)

Contextual Info: KSA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER S O T-23 • C om plem ent to KSC 1623 • Col lector-Base Voltage: VCbo= -60V A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

2SC4008

Contextual Info: 2SA1635 2SC4008 Transistors I Power Transistor 80V, — 4A 2SA1635 • F e a tu r e s • A b so lu te maximum ratings ( T a = 2 5 t ) 1 ) Low VcE(sat>. (Typ. —0.3V ;at lc/la=«=—2 /—0.2A ) Param eter C ollecto r-base voltage Coilector-em itter voltage

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

Contextual Info: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ 2SC1623 TRANSISTOR NPN 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES ^6%4rdlsslpation Pcm : 0.2 W (Tamb=25"C) Collector current ICM: H- 0.1A 2.4 Collector-base voltage V(br)cbo :60V Operating and storage Junction temperature range

BLY87A

Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
Contextual Info: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y

Transistor 9012 ax

Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
Contextual Info: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge

transistor BR 9013

Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
Contextual Info: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER

9014 ch

Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Contextual Info: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011

CP1005

Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Contextual Info: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I

Contextual Info: SIEMENS Reflexlichtschranke im SMT-Gehäuse Light Reflection Switch in SMT Package SFH 901 Vorläufige Daten Preliminary Data 6.2 5.8 ,3.4, 4.2 3.8 3.0 mio do 0.5 0.3 1.27 spacing GE006840 SFH 901 /9 0 2 1 Anode | - | EmiHer | Collector | Base | Cathode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

JE9016

Abstract: A78G
Contextual Info: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

metal halide ignitor circuit

Abstract: OSRAM ignitor Metal Halide Lamp Ignitor k2200e70 ignitor xenon HQI-T250W 50hz sine oscillator K1050G K2400F1 K1100G
Contextual Info: D O -2 1 4 A A S u r fa c e M o u n t T O -2 0 2 A B Type 1 T O -9 2 T ype 70 D o n o t u s e m o u n tin g ta b o r c e n te r le a d , e le c t r ic a lly c o n n e c te d SIDAC 95 - 330 Volts General Description T h e S id a c is a s ilic o n b ila te ra l v o lta g e trig g e re d s w itc h w ith

Contextual Info: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r

g4 ph 500 transistor

Abstract: BLX92A IEC134 362-0 transistor TRANSISTOR C 3619 BLX92
Contextual Info: N AMER J^HILIPS/DISCRETE 86D 018 12 ObE D • D T-33-ÒS bbSBTBl O Q m D S Ü J BLX92A U.H.F. PO W E R TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

ip9010

Abstract: PJ 0346
Contextual Info: HIP9010 H A R R IS S E M I C O N D U C T O R È Description Features T h e H IP 9010 is used to provide a m ethod of detecting pre­ m ature de tona tion or “ K nock” in autom otive engines. Tw o S e n s o r Inputs • M ic ro p ro c e s s o r P ro g ram m a b le

BR 9014 transistor

Abstract: AN-946B FD9014 BR 9014 C TRANSISTOR Pelly high power class d
Contextual Info: AP P LIC A TIO N NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X F E T is t h e t r a d e m a r k t o r I n t e r n a t i o n a l R e c t i f i e r P o w e r M O S F E T s By S. C L E M E N T E , B. PELLY, R. R U T T O N S H A , B. TAYLO R

Contextual Info: KSC1394 NPN EPITAXIAL SILICON TRANSISTOR TV V H F TUNER MIXER TO -92 • H igh Current G ain Bandw idth Product Í t*700MH z • H igh Pow er G ain G PE=*20dB Min at f=200MHz • Low N oise Fihure NF=3.5dB (Max) at f=200MHz ABSOLUTE MAXIMUM RATINGS <TA=

transistor IR 840

Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554
Contextual Info: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION