TRANSISTOR TE 901 Search Results

2SC950

Abstract: 2SC951 2sc950 transistor 2SA573 2SA574
Contextual Info: Si PNP TRANSISTOR 2SA573, 2SA574 EPOXY MOLDED, AUDIO AMP., RF AMP., SWITCHING • A BSO LU TE M A X IM U M R A T IN G S Ta : 25°C 2SA573 -3 0 -2 5 "60 -5 0 V V ceo . . V ebo .

Contextual Info: KSA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER S O T-23 • C om plem ent to KSC 1623 • Col lector-Base Voltage: VCbo= -60V A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

BLY87A

Abstract: transistor bly87a C 1008 y transistor RF POWER TRANSISTOR NPN T-33-07 a 1009
Contextual Info: PHILIPS 41ED H 7 1 1 0 0 2 b G 027C 1G 3 INTERNATIONAL HPHIN BLY87A M A I N T E N A N C E TYPE T -3 3 -0 7 V.H.F. POWER TRANSISTOR N -P -N silico n p la n a r e p ita x ia l tra n s is to r f o r use in class-A , B and C o p e ra te d m o b ile and m ilit a r y

SL 100 NPN Transistor

Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
Contextual Info: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE

transistor IR 840

Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554
Contextual Info: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION

J 3305

Abstract: BLX67 transistor J 3305 transistor TE 901 transistor 3305 th258 R5305 transistor c 1974
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D m 711GÔEb 00277^1 2 E1PHIN BLX67 - r - 3 3 - 0 5 “ • U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,8 V.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: TTL MSI TYPES SN548ÎA, SN5484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES B U L L E T I N N O . D L -S 7 2 1 1 5 8 1 , D E C E M B E R 1 9 7 2 description Each o f these 16-bit active-element memories is a high-speed, m o n o lith ic, transistor-transistor-logic

transistor TE 901

Contextual Info: TILI 89-1 THRU TILI 89-4 TILI 90-1 THRU TIL190-4 OPTOCOUPLERS/OPTOISOLATORS D 2 9 8 7 , JANUARY 1 9 8 7 -R E V IS E D JULY 198 9 • High Direct-Current Transfer Ratios, 5 0 0 % Minimum at Ip - 10 mA and Up to 1 5 0 0 % at Ip • 2 mA with Choice of Four Categories

Contextual Info: TM September 2013 • What are Semiconductor Devices? • How Semiconductors are Made − Front-End Process − Back-End Process • Fabrication Facility and Equipment Issues • Business Aspects of Supplying Semiconductors TM 2 TM 4 A conductor carries electricity like a pipe

TN3725A

Abstract: LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
Contextual Info: D is c r e t e P O W E R & S i g n a l ^ . T e c h n o lo g ie s TN3725A MMPQ3725 TN3725AI MMPQ3725 & XT . , N a t i o n a l _ , S e m i c o n d u c t o r ,M S O IC -1 6 NPN Switching Transistor Th is d e v ic e is d e sig n e d fo r high sp eed co re d rive r a pp licatio n s

Contextual Info: SE M IC O N D U C T O R - TN3725A MMPQ3725 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. AbSOlUtG Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted

2n2926 transistor

Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923
Contextual Info: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924

EL 14v 4c

Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
Contextual Info: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten

RU901

Contextual Info: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrt*h7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 * n 7|g|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95

m39016/9

Abstract: m39016 M39016 11 jmaw MOSFET Driver coil JMAW-26XM 9-018M
Contextual Info: Part Details for P/N: JMAW-26XM Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Relays Military/Aerospace High Performance Relays Part Number Search JMAW-26XM Active ELV Compliant Document Search CAD Model Search

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

2SC4008

Abstract: 2SA1635 2SC4D
Contextual Info: 2SA1635 2SC4008 Transistors I Power Transistor —80V, —4A 2S A 1635 • Features 1) 2 ) 3) 4) 5) • A b s o l u t e m a x im u m ra tin g s ( T a = 2 5 'C ) Low VceiMt). (Typ. —Ô.3V at Ic /Ib = — 2J—0.2A) Excellent DC current gain characteristics.

2n120

Abstract: Transistor 9012 ax 9012 transistor
Contextual Info: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures m echanical d a ta W elded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

texas diode opto TIL 09

Abstract: til 701 D2987 til 081 TIL190-1 til-169 TIL1901 TIL190-4 2401 opto tl 701
Contextual Info: TIL189 1 THRU T1L189-4 TIL190-1 THRU T i l l 90-4 OPTOCOUPLERSfOPTOISOLATORS S O Q S 03S A D 2 9 8 7 , J A N U A R Y 1 9 8 7 High Direct-Current Transfer Ratios. 5 0 0 % Minimum at Jf - 10 mA and Up to 1 5 0 0 % at Ip - 2 m A w ith Choice of Four Categories

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

2N3397

Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low