TRANSISTOR T 2180 Search Results

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE R t = 4 .7 k£2 R2 = 10 ki2 • Complementary to GA1 L3N ABSOLUTE M A X IM U M R ATIN G S

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ / ¿ P A 1 8 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1814 is a switching device which can be driven directly by a 4 V power source. The JUPA1814 features a low on-state resistance and

16N25E

Abstract: gsp5000 20F40
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP16N25E TMOS E-FET™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

BS170

Contextual Info: BS170 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features • • • • High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown TO-92 Mechanical Data Case: TO-92, Plastic

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

TTP31

Contextual Info: ft P ft FORWARD INTERNATIONAL ELECTRONICS L ID . HP32 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR M ED IU M P O W E R LIN E A R SW IT C H IN G A PPLIC A TIO N S * C om plem ent to TTP31 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Symbol R ating

CL 2181 ic

Abstract: J04045 TRANSISTOR SE 135
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA J04045 The RF Line NPIM S ilic o n V H F P o w e r T ra n sisto r 45 W — 175 MHz RF POWER TRANSISTOR NPN SILICON . . . d e sign e d prim arily for 12.5 Volt w ideband, large-signal am plifier applications in industrial and com m ercial F M equipm ent operating to 175 MHz.

Contextual Info: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is

transistor t 2190

Abstract: 2110 transistor AS-2110 transistor 1740 UMTS transistor transistor C 2240 SiGe PNP transistor ultra low noise transistor transistor cross reference chart SiGe PNP
Contextual Info: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 1 6 B F R 7 4 0 L 3 U l tr a Lo w N o i s e S i G e : C R F T r an s i s t o r a s 2 1 1 0 - 21 7 0 M H z U M T S L o w N o i s e A m p l i fi e r R F & P r o t e c ti o n D e v i c e s

smd transistor pnp 591

Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile

bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum

MTP16N25E

Abstract: S 170 MOSFET TRANSISTOR AN569 FET16
Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP16N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS

AN569

Abstract: MTP16N25E
Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP16N25E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

50n03

Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
Contextual Info: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­

Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

AN569

Abstract: MTB16N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate

L450A

Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
Contextual Info: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

80 amp 30v npn darlington

Abstract: 2N6388 npn darlington transistor darlington power transistor 10a
Contextual Info: 2N6388 Darlington Power Transistor Darlington silicon power transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage

RF NPN POWER TRANSISTOR C 10-12 GHZ

Contextual Info: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is

transistor NEC D 882 p

Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
Contextual Info: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.