TRANSISTOR T 2180 Search Results

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE R t = 4 .7 k£2 R2 = 10 ki2 • Complementary to GA1 L3N ABSOLUTE M A X IM U M R ATIN G S

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ / ¿ P A 1 8 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1814 is a switching device which can be driven directly by a 4 V power source. The JUPA1814 features a low on-state resistance and

Contextual Info: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is

AN569

Abstract: MTB16N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate

transistor NEC D 882 p

Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
Contextual Info: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.

Contextual Info: RF2155 3V PROGRAMMABLE GAIN POWER AMPLIFIER Typical Applications • Analog Communication Systems • Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems • 3V Applications • 400MHz Industrial Radios 0.158 0.150 SiGe HBT InGaP/HBT

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

transistors, thyristors 712

Abstract: CA3240
Contextual Info: HARRIS SEMICOND SECTOR ì H a r r • 43G2271 00ML340 Ô73 H H A S i s C SEMICONDUCTOR A J f U 3 2 mm 4 M Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output 1993 Features Description • Dual Version of CA3140 The CA324QA and CA3240 are dual usrsions of the

Contextual Info: Ordering number : ENN5161C Monolithic Digital IC LB8632V Low-Voltage/Low-Saturation Camera Motor Driver Overview The LB8632V is a general-purpose camera motor driver IC that supports low-saturation output and low-voltage drive and thus can be used in a wide range of applications.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

rca ca3140

Abstract: CA3059 equivalent CA3240 rca ca3240 rca ca3240E CA3240E1 IC 741 amp window comparators CA3240 EQUIVALENT CA3086E 80 amp 30v npn darlington
Contextual Info: CA3240 S E M I C O N D U C T O R Dual BiMOS Operational Amplifier with MOSFET Input/Bipolar Output March 1993 Features Description • Dual Version of CA3140 The CA3240A and CA3240 are dual versions of the popular CA3140 series integrated circuit operational

CL21B105KB

Abstract: CL21B105KBFNNNE inductor 100uH CL21B105 sot-23-6 marking 345 LQH32PN100MN0L murata CAPACITOR CL21B105KBFNNN capacitor 10uF 50V GRM188R71H223KA01D
Contextual Info: MIC2619 1.2MHz PWM Boost Converter with OVP General Description Features The MIC2619 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for low power, high output voltage applications. With a maximum output voltage of 35V, and a switch current of over 350mA, the

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

transistor tt 2170

Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
Contextual Info: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute

10nF 50V cog samsung

Abstract: 100nF 50V X7R samsung CL21A226MPCLRNC CL21A226 Samsung Capacitor CL10B103KB8 CAPACITOR 2.2UF CL10A225K08NNN GRM188R61C225KE15 CL10B104KB
Contextual Info: MIC2253 3.5A 1MHz High Efficiency Boost Regulator with OVP and Softstart General Description Features The MIC2253 is a high power density 1MHz PWM DC/DC boost regulator. The 3.5A minimum switch current limit combined with a 1MHz switching frequency allows the

D1380

Abstract: Nec 658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and

simple power supply schematic diagram

Abstract: RF3931S2 ATC800A3R3BT
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance

Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

N6358

Abstract: MIC2292C MIC2292C-15YML MIC2293C ua105
Contextual Info: MIC2292/93C High Frequency PWM White LED Drivers with Internal Schottky Diode and OVP General Description Features The MIC2292C and MIC2293C are high frequency, Pulse Width Modulator PWM boost regulators optimized for constant-current, white LED driver applications. Because

430-MHz

Abstract: RF21 RF2155
Contextual Info: RF2155 3V PROGRAMMABLE GAIN POWER AMPLIFIER Typical Applications • Analog Communication Systems • Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems • 3V Applications • 400MHz Industrial Radios Product Description The RF2155 is a 3V medium power programmable gain

Contextual Info: RF2155 2 3V PROGRAMMABLE GAIN POWER AMPLIFIER Typical Applications • Analog Communication Systems • Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems • 3V Applications 2 Product Description POWER AMPLIFIERS • 400MHz Industrial Radios

600S4R7BT250

Abstract: ecj2yb1h104k
Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency