TRANSISTOR T 2180 Search Results

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistors Built-in TYPE R t = 4 .7 k£2 R2 = 10 ki2 • Complementary to GA1 L3N ABSOLUTE M A X IM U M R ATIN G S

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ / ¿ P A 1 8 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1814 is a switching device which can be driven directly by a 4 V power source. The JUPA1814 features a low on-state resistance and

Contextual Info: ERICSSON í PTB 20245 35 Watts, 2 . 1 - 2 . 2 GHz P C N / P C S P o w e r Transistor Description T h e 20 24 5 is a cla ss AB, NPN com m on em itter RF p o w e r tra n sisto r in tended for 26 V dc operation from 2.1 to 2.2 G H z fre q u e n cy band. Rated at 35 w a tts m inim um ou tput po w e r for PEP ap plicatio ns, it is

Contextual Info: MOTOROLA Order this document by MTP16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP16N25E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

AN569

Abstract: MTB16N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate

transistor NEC D 882 p

Abstract: B5G1 045H5 marking BSs sot-23 nec d 882 p nec d 882 p datasheet TL 188 TRANSISTOR PIN DIAGRAM transistor NEC D 882 p 6V transistor tl 187 LP2980
Contextual Info: LP2980 National Semiconductor LP2980 Micropower SOT, 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA, fixecf-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­ ered applications.

Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency

Contextual Info: RF2155 3V PROGRAMMABLE GAIN POWER AMPLIFIER Typical Applications • Analog Communication Systems • Driver Stage for Higher Power Applications • 900MHz Spread Spectrum Systems • 3V Applications • 400MHz Industrial Radios 0.158 0.150 SiGe HBT InGaP/HBT

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

transistors, thyristors 712

Abstract: CA3240
Contextual Info: HARRIS SEMICOND SECTOR ì H a r r • 43G2271 00ML340 Ô73 H H A S i s C SEMICONDUCTOR A J f U 3 2 mm 4 M Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output 1993 Features Description • Dual Version of CA3140 The CA324QA and CA3240 are dual usrsions of the

Contextual Info: Ordering number : ENN5161C Monolithic Digital IC LB8632V Low-Voltage/Low-Saturation Camera Motor Driver Overview The LB8632V is a general-purpose camera motor driver IC that supports low-saturation output and low-voltage drive and thus can be used in a wide range of applications.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

CL21B105KB

Abstract: CL21B105KBFNNNE inductor 100uH CL21B105 sot-23-6 marking 345 LQH32PN100MN0L murata CAPACITOR CL21B105KBFNNN capacitor 10uF 50V GRM188R71H223KA01D
Contextual Info: MIC2619 1.2MHz PWM Boost Converter with OVP General Description Features The MIC2619 is a 1.2MHz pulse width modulated PWM step-up switching regulator that is optimized for low power, high output voltage applications. With a maximum output voltage of 35V, and a switch current of over 350mA, the

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

46dBm

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

transistor tt 2170

Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
Contextual Info: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute

MIC2253

Abstract: GRM188R71H104KA93 RLF7030T-2R2M CL21A226m CL10B103KB8NNN Samsung Capacitor CL10B104KB8 Samsung rohs 0603 capacitor
Contextual Info: MIC2253 3.5A 1MHz High Efficiency Boost Regulator with OVP and Softstart General Description Features The MIC2253 is a high power density 1MHz PWM DC/DC boost regulator. The 3.5A minimum switch current limit combined with a 1MHz switching frequency allows the

C5750X7R1H106M-tdk

Abstract: 0603ZC222KAT2A SK34A MIC326
Contextual Info: MIC3263 Six-Channel WLED Driver for Backlighting Applications with Flicker-Free Dimming General Description Features The MIC3263 is a high-efficiency Pulse Width Modulation PWM boost switching regulator that is optimized for constant-current WLED driver backlighting applications.

10nF 50V cog samsung

Abstract: 100nF 50V X7R samsung CL21A226MPCLRNC CL21A226 Samsung Capacitor CL10B103KB8 CAPACITOR 2.2UF CL10A225K08NNN GRM188R61C225KE15 CL10B104KB
Contextual Info: MIC2253 3.5A 1MHz High Efficiency Boost Regulator with OVP and Softstart General Description Features The MIC2253 is a high power density 1MHz PWM DC/DC boost regulator. The 3.5A minimum switch current limit combined with a 1MHz switching frequency allows the

D1380

Abstract: Nec 658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and

simple power supply schematic diagram

Abstract: RF3931S2 ATC800A3R3BT
Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz