TRANSISTOR SS V Search Results

Contextual Info: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

BF314

Abstract: TRANSISTOR bf314
Contextual Info: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F

2SC5343

Abstract: SUT485J kst60 SUT485
Contextual Info: SUT485J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT485J Package Code SS SOT-363 Outline Dimensions unit : mm

SS TRANSISTOR

Abstract: SRA2204 SUR502EF TRANSISTOR MARKING CODE ss
Contextual Info: SUR502EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2204 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR502EF Marking SS Package Code SOT-563F

circuit diagram induction heating

Abstract: QID3310002 induction heating circuit diagram
Contextual Info: m W EREX QID3310002 « • ‘ SS*# SOT«'6 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID 3310002 • • • • VCES . 3300V

Contextual Info: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417

2SJ313

Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
Contextual Info: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013

Contextual Info: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.

transistor C1000 Toshiba

Abstract: 2SJ313 2SK2013 SV125
Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013

c 111 transistor

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200

2SK1356

Contextual Info: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V

bss65

Contextual Info: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

TAA 785 A IC

Contextual Info: HARKTECH INTERNATIONAL ~Û7 I > F | S 7 ci citI SS TRANSISTOR COUPLER 5799655 M A R K T E C H INTERNATIONAL 87D 00124 DOOD1SM D T-H-J-ÏZ M TPC6320 INFRARED LED+PHOXO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL ISOLATOR • PROGRAMMABLE CONTROLLERS A -H • SOLID STATE RELAY

Contextual Info: IDM29703 National Semiconductor ID M 2 9 7 0 3 Open-Collector 64-Bit Random A c c e ss M em ories General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic TTL arrays organized as 16 words of four-bits each. They are

A71B

Abstract: b1202 pt100 multiplexer RTD Embedded Technologies sandisk ultra ii SM3000
Contextual Info: Data Sheet SS/SM3000 Issue 18 Multipoint Videographic Recorder SM3000 Large clear display – 31 cm 12.1 in. thin film transistor (TFT) color screen Unsurpassed environmental protection – hosedown to IP66 and NEMA4X standards Multiple point recording – up to 36 universal analog inputs

2N6849

Contextual Info: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-

2SC5363

Contextual Info: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment

rtd pt100 sensor thin film

Abstract: EM60068-2 abb sm2000 SIMPLE DOOR ALARM SYSTEM free Password based door locking system pt100 multiplexer sandisk ultra ii sandisk usb flash drive 16 gb sm2000 B12156
Contextual Info: Data Sheet SS/SM2000 Issue 20 Advanced Videographic Recorder SM2000 Bright and clear display – high contrast, thin film transistor TFT color screen Secure data recording – 8 Mb internal Flash memory for 12 recording channels and logs – no battery back-up required

2SC5363

Abstract: transistor frequency 1.5GHz gain 20 dB
Contextual Info: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |is

Contextual Info: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4