TRANSISTOR SS V Search Results

Contextual Info: 1 MPS-A93 PNP SS SILICON TRANSISTOR 'T O -9 2 A MPS-A93 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

2SC5343

Abstract: SUT485J kst60 SUT485
Contextual Info: SUT485J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT485J Package Code SS SOT-363 Outline Dimensions unit : mm

SS TRANSISTOR

Abstract: SRA2204 SUR502EF TRANSISTOR MARKING CODE ss
Contextual Info: SUR502EF Semiconductor Epitaxial Planar Type PNP Silicon Transistor Descriptions • Digital transistor Features • Two SRA2204 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR502EF Marking SS Package Code SOT-563F

circuit diagram induction heating

Abstract: QID3310002 induction heating circuit diagram
Contextual Info: m W EREX QID3310002 « • ‘ SS*# SOT«'6 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID 3310002 • • • • VCES . 3300V

Contextual Info: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417

Contextual Info: L ALLEGRO MICROSYSTEMS INC •=13 DSDM33Ö QQ03771 ö ■ T-91-01 P R O C E S S NJ903 Process NJ903 N-Channel Junction Field-Effect Transistor Proce ss N J903 is an N-channel junction fleldeffect transistor designed for very low O N resistance analog or digital switching applications.

transistor C1000 Toshiba

Abstract: 2SJ313 2SK2013 SV125
Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013

c 111 transistor

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1529 SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 15.9MAX . High Breakdown Voltage 03.2±O.2 : Vj ss“180V MIN.) 7 . High Forward Transfer Admittance : | Yfs | “4.OS (TYP.) . Complementary to 2SJ200

2SK1356

Contextual Info: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V

bss65

Contextual Info: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage

Contextual Info: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor BSS123LT1 N-Channel 3 DRAIN Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit D rain-Source Voltage V d SS 100 Vdc G ate-Source Voltage

TAA 785 A IC

Contextual Info: HARKTECH INTERNATIONAL ~Û7 I > F | S 7 ci citI SS TRANSISTOR COUPLER 5799655 M A R K T E C H INTERNATIONAL 87D 00124 DOOD1SM D T-H-J-ÏZ M TPC6320 INFRARED LED+PHOXO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL ISOLATOR • PROGRAMMABLE CONTROLLERS A -H • SOLID STATE RELAY

Contextual Info: IDM29703 National Semiconductor ID M 2 9 7 0 3 Open-Collector 64-Bit Random A c c e ss M em ories General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic TTL arrays organized as 16 words of four-bits each. They are

2N6849

Contextual Info: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage — Continuous — Non-repetitive tp < 50 |is

Contextual Info: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

ss100 transistor

Abstract: 2SK2605
Contextual Info: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N CHANNEL MOS TYPE HIGH POWER AM PL IF IE R AP PL IC AT IO N Unit in mm . High Breakdown Voltage 20.5MAX : Vd ss *200V MIN. ff 3.3 ±0.2 . High Forward Transfer Admittance : |Yfs | *5.0S(TYP.) . Complementary to 2SJ201

Contextual Info: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW

Contextual Info: N AMER PHILIPS/DISCRETE fe,TE » • bbS 3 R 31 DD 3 Q 3 SS b 7 T « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and

Contextual Info: ERICSSON ^ PTB 20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor D escription T he 20 00 9 is a cla ss AB, NPN, com m o n em itter RF po w e r tra n sisto r intended fo r 24 V dc op era tion acro ss th e 935 to 960 M H z fre q u e n cy band. Rated at 2.5 W atts m inim um ou tput pow er, it m ay be used fo r

STP19N05L

Abstract: STP19N06L
Contextual Info: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STP40N06L

Abstract: 3013A STP40N06LFI vdgr test circuit schematic diagram d
Contextual Info: SGS-THOMSON STP40N06L STP40N06LFI ¡LIOT Q«S N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ADVANCE DATA TYPE STP40N06L S TP40N06LFI V d ss R 0S(on Id 60 V 60 V 0.04 a 0.04 £2 40 A 22 A . . . . . • . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED