2SK2013 Search Results

Contextual Info: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)

Toshiba 2SJ

Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)

2sk2013 2SJ313

Abstract: 2SJ313 2SK2013
Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313

2SJ313

Abstract: 2SK2013
Contextual Info: 2SK2013 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 SK2 0 1 3 U n it in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATION o M A X IM U M RATINGS Ta = 25°C SYM BOL CHARACTERISTIC Drain-Source V oltage V D SS Gate-Souree V oltage

k2013

Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)

2SJ313

Abstract: 2SK2013 SC-65
Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313

transistor C1000 Toshiba

Abstract: 2SJ313 2SK2013 SV125
Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013

2sk2013 2SJ313

Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)

2SJ313

Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
Contextual Info: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013

2SJ313

Abstract: 2SK2013 2sk2013 2SJ313
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)

2sk2013 2SJ313

Abstract: transistor marking 9D
Contextual Info: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR 1 SILICON P CHANNEL MOS TYPE <; I mm 3 mm m 1 3 m mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • High Breakdown Voltage : V d SS—_ 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013

2sk2013

Contextual Info: TOSHIBA 2SK2013 2 S K2 0 1 3 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj}gg= 180V High Forward Transfer Admittance : |Yfg| = 0.7S Typ. Complementary to 2SJ313

Contextual Info: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013

Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)

EH 14 A

Abstract: 2SJ313 2SK2013
Contextual Info: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013

2SJ313

Abstract: 2SK2013
Contextual Info: T O S H IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 SK2 0 1 3 U n it in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATION o M A X IM U M RATINGS Ta = 25°C SYM BOL CHARACTERISTIC Drain-Source V oltage V D SS Gate-Souree V oltage

2sk2013 2SJ313

Abstract: Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)

2SK2013

Abstract: K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ
Contextual Info: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)

2sk2013 2SJ313

Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Tc = 25°C)

2SJ313

Abstract: 2SK2013 Toshiba 2SJ
Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)

toshiba marking code transistor

Abstract: 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ
Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SJ313 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • 10 ì 0.3 High Breakdown Voltage : V D g g = —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013

2SJ313

Abstract: J313 2SK2013 Toshiba 2SJ
Contextual Info: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)