TRANSISTOR SOT23 BR Search Results

Contextual Info: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium pow er NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA

marking 1G SOT23

Abstract: base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06
Contextual Info: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA APPLICATIONS

Contextual Info: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23

Contextual Info: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23

K1 transistor

Contextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.

Contextual Info: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound

PNP POWER TRANSISTOR SOT23

Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Contextual Info: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O_ COMPLEMENTARY TYPE- FMMT593 PARTMARKING DETAIL- 493 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VALUE UNIT

ic 7495

Contextual Info: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

4 phase stepper motor

Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Contextual Info: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE

marking P51 transistor

Abstract: ZX5T751F 1A SOT23
Contextual Info: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •

FMMT634

Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
Contextual Info: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

CM12A

Abstract: br 2222 npn ZX5T651F
Contextual Info: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS

FMMTA20R

Abstract: FMMTA20 FMMTA70 DSA003703 FMMTA20R-3C
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FMMTA20 ISSUE 2 – MARCH 1995 PARTMARKING DETAIL – COMPLEMENTARY TYPE – FMMTA20 – 1C FMMTA20R – 3C E C FMMTA70 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO

STT817

Abstract: st17 SOT-23-6LTSOP-6
Contextual Info: STT817 PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS CHARGE POWER SWITCH FOR MOBILE PHONE ■ DESCRIPTION The device is manufactured using Epitaxial Planar Technology. SOT23-6L TSOP6 INTERNAL SCHEMATIC DIAGRAM

MMBT5401

Contextual Info: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound

transistor n53

Abstract: ZX5T653F h 033 Marking N53
Contextual Info: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS

marking P53 transistor

Abstract: ZX5T753F
Contextual Info: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •

FMMTA14

Abstract: FMMTA64 FZTA64
Contextual Info: SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR FMMTA64 ✪ ISSUE 3 – MARCH 2001 PARTMARKING DETAIL – FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO

K1M 103

Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
Contextual Info: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 – BC858  Case material: molded plastic, “Green” molding compound