TRANSISTOR SOT 23 FS 35 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

WE VQE 23 F

Abstract: BFS17AA WE VQE 11 E WE VQE 24 E BFS17 BFS17A TRANSISTOR BSP 149 TRANSISTOR A22 transistor marking A21
Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • 1^ 5 3 = 1 3 1 0013145 b B FS 17A T -3 M 7 N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope. It is intended fo r a wide range o f v.h.f. and u.h.f. applications in thick and thin-film circuits.

TRANSISTOR BC 707

Abstract: CFK40 transistor bf 274 BF 273 transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

BF509S

Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
Contextual Info: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation

Contextual Info: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10

npn tr array

Abstract: Seven Transistor Array PNP CA3046 pnp array ICL8038 function generator pnp 8 transistor array ultra low noise NPN transistor "PNP Transistor array" video genlock pll soic 8 transistor array high frequency PAL 007 a MOSFET
Contextual Info: Other Analog 6 HIGH PERFORMANCE ANALOG PRODUCT TREES ANALOG Selection Guides Video Video Genlock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-2 Video Sync Separator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

MMBF5484LT1

Abstract: TO-236A
Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MGSF1N03LT1

Abstract: MGSF1N03LT3 DIODE CMS MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR . TECHNICAL o .c.RE.EN. Order this document by MGSFlN03LT1/D DATA . LINETM Low rDS on Small-Signal MOSFETS TMOS Single N-Channel Field Effect Transistors I I I ( Pati of the GreenLineTM Portfolio of devices with energy–

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

BSR58LT1

Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50

application note jfet J111 transistor

Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

Diode Gfg 6f

Abstract: MMBF5484LT1
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MMBF5484LT1

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

application note jfet J111 transistor

Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
Contextual Info: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

MMBF4416LT1

Abstract: ON932 ON732 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF4416LT1/D SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS

MMBF5484

Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

MMBF4416LT1

Abstract: MMBF4416LT1G FR 220
Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage