TRANSISTOR SMD BF Search Results

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor
Contextual Info: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.

TRANSISTOR SMD MARKING CODE a9

Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
Contextual Info: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency

BFS17

Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R BFS17W
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

BF822W

Contextual Info: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V

MARKING SMD PNP TRANSISTOR F8

Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
Contextual Info: Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
Contextual Info: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

TRANSISTOR SMD MARKING g1

Abstract: smd transistor g1 ff 0401 transistor g1 smd TRANSISTOR marking G1 sot-23 G1 SOT-23 G1 TRANSISTOR ff 0401 smd transistor marking g1 BFS20
Contextual Info: Transistors SMD Type NPN Medium Frequency Transistor KFS20 BFS20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 25 mA) 0.4 3 Features 1 Very low feedback capacitance (typ. 350 fF). 0.55 Low voltage (max. 20 V) 2 +0.1

marking F2

Abstract: smd marking f2 BFS19 F2 smd ic sot23-5
Contextual Info: Transistors SMD Type NPN Medium Frequency Transistor BFS19 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low Voltage max. 20 V +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 30 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1

0401 transistor

Abstract: BF840 npn 222 SMD IC MARKING NC NC marking transistor marking NC ja TRANSISTOR smd transistor smd marking NA sot-23
Contextual Info: Transistors IC SMD Type NPN Medium Frequency Transistor BF840 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low current max. 25 mA . 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

ML 1557 b transistor

Contextual Info: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25

ku-band lnb

Abstract: SOT363F Multiple output LNB lnb ku BFU725F LNA ku-band QUBiC4X smd transistor sot363 ku-band lnb satellite BGA28xx
Contextual Info: NXP satellite LNB devices BFU725F and BGA28xx Complete satellite portfolio for all LNB architectures Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and

transistor BC 245

Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers

transistor DATA REFERENCE handbook

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a

ic used in satellite receiver

Abstract: schematic circuit board satellite tuner AN00003 MICROCAP BFG520 amplifier simulation circuit TDA8060A TDA8060TS PHILIPS tuner schematic Digital Satellite Receivers
Contextual Info: Philips Semiconductors A wideband LNA using the BFG520 for satellite receivers Application Note AN00003 APPLICATION NOTE A wideband LNA using the BFG520 for satellite receivers AN00003 Author s : H. Maas Philips Semiconductors Systems Laboratory Eindhoven,

Contextual Info: Transistors IC SMD Type Product specification BF840 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low current max. 25 mA . 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage (max. 40 V).

Contextual Info: Transistors SMD Type Product specification BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V Collector-emitter voltage (open base)

Contextual Info: Transistors IC SMD Type Product specification BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage

Contextual Info: Transistors SMD Type Product specification BF820W Features Low current max. 50 mA High voltage (max. 300 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 300 V Collector-emitter voltage (open base)