TRANSISTOR S9015 Search Results

S9014M

Abstract: S9015M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors S9015M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor 1.2x1.2×0.5 unit: mm FEATURES High hFE and good linearity Complementary to S9014M TOP

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

S9015

Abstract: S9015M S9014M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M

S9015B

Abstract: PSS9014 noise Philips TO-92 MARKING CODE W PSS9014 PSS9015B S9015* transistor s9015
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9015B PNP general purpose transistor Product specification 2002 Sep 20 Philips Semiconductors Product specification PNP general purpose transistor PSS9015B FEATURES PINNING • Low collector capacitance.

S9015B

Abstract: S9015 PSS9014 PSS9015B SC-43A PSS9014 noise
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9015B PNP general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification PNP general purpose transistor PSS9015B FEATURES

Contextual Info: S9015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER * Complement to S9014LT1 * Collector Current: Ic= -100mA * Collector-Emitter Voltage:Vce= -45V Package:SOT-23

Contextual Info: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity

Contextual Info: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

S9015T

Contextual Info: S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. PC=0.45W

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR PNP SOT–323 FEATURES  Small Surface Mount Package  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. S9015S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY,LOW NOISE AMPLIFIER * Complement to S9014S * Collector C urrent: Ic=-100mA * Collector-Emitter Voltage: Vceo=-45V. ABSOLUTE MAXIMUM RATINGS a t TandHZ5°C

S9014L

Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L
Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW

BCW60B

Abstract: BCW60BLT1 S9014LT1 S9015LT1
Contextual Info: BCW60BLT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25

s9015 SOT23 transistor

Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION

S9015LT1

Contextual Info: 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25

S9015 SOT-23

Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

S9015

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter