TRANSISTOR S71 Search Results

transistor s72

Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BUK445

Abstract: BUK445-60A BUK445-60B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor fp 1016

Abstract: BFQ34T ON4497 FP 801 UBB361
Contextual Info: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

Transistor BF988

Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Contextual Info: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 - JA N U A R Y 1996_ PARTMARKING DETAIL:- DEVICE TYPE IN FULL COM PLEM ENTARY T Y P E :- FZTA64 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-E m itter Voltage VALUE

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

S7-1200

Abstract: 6ES7222-1BF30-0XB0 transistor power 5w SIMATIC S7-1200 S71200 Siemens Power Connectors simatic siemens SIEMENS SIMATIC S7 siemens power transistor siemens cable s7
Contextual Info: 6ES7222-1BF30-0XB0 Page 1 Product data sheet 6ES7222-1BF30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 8 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection

SC75

Abstract: SC-75 SiP4282A
Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

JANTXV2N2222AUA

Abstract: transistor s71 2N2222AUA
Contextual Info: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed

6ES7222-1BH30-0XB0

Abstract: S7-1200 siemens cable connection s7 siemens simatic s7 power supply power supply LED 5w
Contextual Info: 6ES7222-1BH30-0XB0 Page 1 Product data sheet 6ES7222-1BH30-0XB0 SIMATIC S7-1200, DIGITAL OUTPUT SM 1222, 16 DO, 24V DC, TRANSISTOR 0.5A Supply voltages Rated value permissible range, lower limit DC 20.4 V permissible range, upper limit (DC) 28.8 V Short-circuit protection

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

MCB700

Abstract: n7000 A 673 C2 transistor 2n7000 Lk53
Contextual Info: Philips Components 2N7000 Data sheet status Product specification date o f Issue October 1990 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low R 0S on SYMBOL • Direct interface to C-MOS, TTL, etc. Vos drain-source voltage

MMBT6520

Abstract: transistor d 2389
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor M M B T6520LT1 PNP Silicon COLLECTOR Motorola Preferred Device 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Rating Symbol Value VCEO -350 Vdc Collector-Base Voltage

Contextual Info: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

j 6910

Abstract: transistor j 6910
Contextual Info: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion

transistor zo 103 MA 7S 738

Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

6ES7223-1BL30-0XB0

Abstract: 16DO SM1223 1223 digital transistor 16DI S7-1200
Contextual Info: 6ES7223-1BL30-0XB0 Page 1 Product data sheet 6ES7223-1BL30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 16DI / 16DO, 16DI DC 24 V, SINK/SOURCE, 16DO, TRANSISTOR 0.5A Supply voltages Rated value 24 V DC Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)

6ES7223-1BH30-0XB0

Abstract: 1223 digital transistor SM1223 S7-1200 SIMATIC S7-1200
Contextual Info: 6ES7223-1BH30-0XB0 Page 1 Product data sheet 6ES7223-1BH30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 8DI / 8DO, 8DI DC 24 V, SINK/SOURCE, 8DO, TRANSISTOR 0.5A Supply voltages Rated value DC 24 V Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)

BF981

Abstract: bf981 TRANSISTOR sot103
Contextual Info: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni­

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve