TRANSISTOR S1P Search Results

Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol

transistor s1p

Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol

MARKING s1P

Abstract: FJX2222A transistor s1p
Contextual Info: FJX2222A FJX2222A General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

MARKING s1P

Abstract: FJX2222A
Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor s1p

Abstract: MARKING s1P
Contextual Info: FJX2222A FJX2222A 3 General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor s1p

Abstract: S1P transistor S1p MARKING F1 SOT-323
Contextual Info: FJX2222A FJX2222A General Purpose Transistor 2 1 NPN Epitaxial Silicon Transistor SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCES Collector-Emitter Voltage

h11E

Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P

SMBT2907AW

Abstract: MARKING s1P smbt2222a sot23 marking code S1p MARKING BCW66 77 ic marking code transistor marking code 24 24 marking code transistor transf SMBT2222A SOT23
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration

s1P SOT23

Abstract: 619 SOT23-3 h11e
Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration

h22e

Contextual Info: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP Type Marking SMBT2222A/MMBT2222A s1P 1 Pin Configuration 1=B 2=E Package

MARKING s1P

Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

npn 2222 transistor

Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

Contextual Info: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161

MARKING s1P

Abstract: 99V0
Contextual Info: SMBT2222A NPN Silicon Switching Transistor 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

CHT2222AGP

Abstract: transistor s1p
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT2222AGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.

CHT2222APT

Abstract: transistor s1p
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.

transistor s1p

Abstract: CHT4401PT SOT23 timer ic S1p MARKING
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT4401PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Low voltage Max.=40V . * High saturation current capability.

4AC17

Abstract: 4AC16 3AC13 5AE12 3AA11 3AC12 4AA11 4AA12 4AC15 4AC24
Contextual Info: noHm Power Transistor Arrays Five 12 pin, Four 10 pin and three 8 pin T 0 -2 2 0 power transistors are packed in a single package. Suitable for motor drive and printer dot drive. PSIP8Pin VcEO V Equivalent circuits -6 ☆3AA13 -8 0 -4 *3 A C 1 1 © ffi

702 TRANSISTOR npn

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
Contextual Info: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING

si9955

Contextual Info: SÌ9976DY Vishay Siliconix N-Channel Half-Bridge Driver FEATURES APPLICATIONS • • • • • • • • • • • • • • Single Input for High-Side and Low-Side MOSFETs 20- to 40-V Supply Static dc Operation Cross-Conduction Protected Undervoltage Lockout

TRANSISTOR N3

Abstract: transistor P17 FET TRANSISTOR N2
Contextual Info: On-Chip Peripheral Components 7 On-Chip Peripheral Components This chapter gives detailed information about all on-chip peripherals of the SAB 80 C 515 except for the integrated interrupt controller, which is described separately in chapter 8. Sections 7.1 and

NB SOT-23 NPN

Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

transistor p14

Contextual Info: On-Chip Peripheral Units 6 On-Chip Peripheral Components 6.1 Parallel I/O The SAB-C511/513 has four 8-bit I/O ports. Port 0 is an open-drain bidirectional I/O port, while ports 1 to 3 are quasi-bidirectional I/O ports with internal pullup resistors. That means, when