TRANSISTOR RX Search Results

RX1214B170W

Abstract: 100A101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

RX1214B150W

Contextual Info: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

RXB12350Y

Contextual Info: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM ­ J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C

Contextual Info: 11_ N AMER PHILIPS/DISCRETE LbSBTBl 0015133 OLE D RX1214B150W r J - 3 2 ^ I 'o ' M IC R O W A V E POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 1.2 to 1.4 GHz frequency range.

SBT3904

Abstract: SUT390EF
Contextual Info: SUT390EF Semiconductor Epitaxial planar NPN silicon transistor Description • Complex type bipolar transistor Feature • Small package save PCB area • Reduce quantity of parts and mounting cost • Two SBT3904 chips in SOT-563F package Ordering Information

DSP56300

Abstract: DSP56303 G38-87 AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or

MPT100

Contextual Info: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &

Response AA0482

Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or

TLP126

Abstract: marking TAIG
Contextual Info: PHOTOCOUPLER GaAIAs IRED & PHOTO-TRANSISTOR TLP126 TENTATIVE DATA PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLPI26 is a small outline coupler, suitable for surface mount assembly. TLP126 consists of a photo transistor, optically

SBT3904

Abstract: SUT390EF
Contextual Info: SUT390EF Epitaxial planar NPN silicon transistor Description • Complex type bipolar transistor Feature • Small package save PCB area • Reduce quantity of parts and mounting cost • Two SBT3904 chips in SOT-563F package Package : SOT-563F Ordering Information

ic 9945 a 8 pin

Abstract: 9945 A transistor ic 9945 a 4 pin L9944 diode 9948 LT 9949 fairchild micrologic 3m 9962 9932 DTL fairchild 9946
Contextual Info: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRO DUCT 0°C TO 75°C TEM PERATURE RAN GE GENERAL DESCRIPTION — Fairchild Diode Transistor Micrologic DT/iL Integrated Circuits family uses

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

transistor 9747

Abstract: 9746 transistor Bc 540 BUF654
Contextual Info: Tem ic BUF654 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation

Contextual Info: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY

transistor SMD g 28

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Contextual Info: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial

Contextual Info: 62 7  % BFU520 NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

transistor AR17

Abstract: CPM1A-30CDR-D counter pv read wiring diagram OMRON CPM1A-30CDR plc omron CPM2A omron cpm1a-40cdr AR2113 OMRON CPM1A-30CDR OMRON cpm2a manual CPM2C-CN111
Contextual Info: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs CPU Units with 20 I/O points Transistor outputs Transistor outputs Supply voltage 24 VDC Operating voltage range 20.4 to 26.4 VDC Power consumption 4 W (CPU Unit only)

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.