TRANSISTOR REVERS CHARACTERISTIC Search Results

Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

transistor revers characteristic

Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol

IF8A

Abstract: 16812
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 “ “ TO SH IB A 99D <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR FIELD 16812 EFFECT D T -3 9 -1 3 TRANSISTOR Y T F *4 4 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSH H I G H SPEED, H I G H C U R R E N T S W I T C H I N G A P P L I CATIONS.

bfr14a

Abstract: Transistor BFR14a
Contextual Info: BFR14A NPN Silicon planar microwave transistor B F R 1 4 A is an expitaxial N P N silicon planar m icrow ave transistor. Due to its low noise figure high am plification and low distortion it is particularly suitable for use in low -n oise pre-stages, broad-band, IF and radar amplifiers up to 5 G H z as w ell as

BPRN00563

Abstract: RB160M fairchild diode smd code Forward Surge Current Ifsm Max 30A
Contextual Info: RB160M-90 Diodes Schottky barrier diode RB160M-90 zApplications General rectification z Land size figure Unit : mm zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 0.85 1.6±0.1 2.6±0.1 ① 3.5±0.2 3.05 zFeatures 1) Small power mold type. (PMDU) 2) Low IR

DIODE T53

Abstract: diode sg 35 transistor marking p3 T53 diode STTA212S
Contextual Info: £Z7 ^ 7# SGS-THOMSON M » iL iO T ( s iO O S S TTA 212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av ) 2A V rrm 1200V trr (typ) 65ns Vf PRELIMINARY DATASHEET 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­

transistor marking 2A H

Abstract: STTA212S
Contextual Info: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION

ir igbt 1200V 40A

Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Contextual Info: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package

HFA06TB60

Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Contextual Info: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi

HFA25PB60

Abstract: Fast Rec Rect CL50 27ac
Contextual Info: P D -2 .3 3 8 international im i Rectifier HEXFRED Provisional Data Sheet HFA25PB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics V •FfAV 25 A »II w r / oo _ Qrr typ) 112 nC 10 A 250 1.7 Alus Ir r m di(rec)M/dt (tvp)

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic

BF 234 transistor

Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

qm150hy-h

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM150HY-H j HIGH POWER SWITCHING USE ! INSULATED TYPE | QM150HY-H • Ic • Vcex Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain.75

IDEC

Abstract: 25CC 2SK3445 v1h diode
Contextual Info: TOSHIBA 25K3445 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE rc-MOS V 2 S K 3445 TENTATIVE INDUSTRIAL HIGH SPEED SWITCHING APPLICATIONS CHOPPE R REGULA [ 10N DC-DC CO NVtRT ER AND MO TOR DRIVE APPLICAT3G NS. * Low Drain - Squroe ON Resistance r

MG300N1

Abstract: MG300N1US1 pj 889 diode mg300n
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG300N1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=l.Oys Max. trr=0-5|is(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) .Enhancement-Mode . The Electrodes are Isolated from Case.

L9350

Abstract: S-925A
Contextual Info: SGS -THOMSON k7 È ü*[R } o [ILi(g¥^(Q )res L9350 HIGH SIDE DRIVER ADVANCE DATA • ■ ■ ■ ■ LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CUR­

L9351

Contextual Info: L9351 HIGH SIDE DRIVER . . . . ADVANCE DATA LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE VERY LOW QUIESCENT CURRENT 30mA max NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CURRENT SHORT CIRCUIT PROTECTION

L9351

Contextual Info: L9351 HIGH SIDE DRIVER . . . . ADVANCE DAT A LOW SATURATION VOLTAGE TTL COMPATIBLE INPUT WIDE SUPPLY VOLTAGE VERY LOW QUIESCENT CURRENT 30mA max NO EXTERNAL COMPONENTS INTERNAL RECIRCULATION PATH FOR FAST DECAY OF INDUCTIVE LOAD CURRENT SHORT CIRCUIT PROTECTION

TEA-1035

Abstract: TEA 1035 2SK1749 tea1035 aakm IEM209
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1749 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1749 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PACKAGE DIMENSIONS lin millimeters FEATURES

IRGP4062DPBF

Abstract: IRGP4062D
Contextual Info: IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of the parts tested for ILM 

30 rpm geared DC motor datasheet

Abstract: PD4-I5709X3208 pd4i57 10 rpm geared DC motor Nanotec Electronic Nanotec Electronic GmbH UL LED DRIVER nanotec db optocoupler with encoder for speed control stepper motor stall current input output phase
Contextual Info: PDx-I Manual Version 2.1 Plug & Drive Series PDx-I -1- PDx-I 2004 Nanotec Electronic GmbH Gewerbestr. 11 85652 Landsham / Pliening Tel.: Fax: (089) 900 686-0 (089) 900 686-50 Internet: www.nanotec.com All rights reserved. This documentation should be carefully read before the installation and

Contextual Info: IRGP4640PbF IRGP4640-EPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C IC = 40A, TC = 100°C tSC ≥ 5µs, TJ max = 175°C C C G GC E VCE(on) typ. = 1.60V @ IC = 24A n-channel G Gate Applications • Inverters • UPS • Welding E E GC TO-247AD IRGP4640-EP

Contextual Info: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C

12v 15A dc motor speed controller circuit diagram

Abstract: laser disk spindle motor controller chart polygon mirror motor DTC24 AN8245 8 pin regulater ic
Contextual Info: ICs for Motor AN8245K, AN8245SCR Laser Disk Spindle Motor Controller • Overview AN8245K The AN8245K and AN8245SCR are speed control drive ICs of the brushless motors by means of the 3-phase fullwave current drive system. They are suitable for controlling/driving the laser disk spindle motors, LBP polygon