TRANSISTOR REPLACEMENT Search Results
TRANSISTOR REPLACEMENT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR REPLACEMENT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
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O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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OCR Scan |
AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS |
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BFS17A September1995 MSB003 R77/02/pp9 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, |
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BFG135 OT223 MSB002 R77/03/pp16 | |
BFS17A
Abstract: MSB003 E2p transistor
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BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor | |
BFG97
Abstract: BFG31 TRANSISTOR BFg97 sc7313
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BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 BFG97 BFG31 TRANSISTOR BFg97 sc7313 | |
bfg97Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 |
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BFG97 OT223 BFG31. MSB002 OT223. R77/02/pp16 bfg97 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS |
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BFS17 MSB003 R77/02/pp8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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BFG35 OT223 MSB002 OT223. R77/03/pp14 | |
marking code W1
Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
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BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35 | |
bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
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BFG135 OT223 BFG135 MSB002 OT223. R77/03/pp16 771-BFG135-T/R bfg135 application note bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115 | |
BFS17
Abstract: NXP BFS17 MSB003
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BFS17 MSB003 R77/02/pp8 BFS17 NXP BFS17 MSB003 | |
BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
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BFG135 OT223 MSB002 R77/03/pp16 BFG135 amplifier SC7313 BFG135 bfg135 application note MBB298 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended |
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BFG198 OT223 MSB002 OT223. R77/03/pp14 | |
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BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
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BFG35 OT223 MSB002 OT223. R77/03/pp14 BFG35 TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier | |
BFG198
Abstract: microstripline
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BFG198 OT223 MSB002 OT223. R77/03/pp14 BFG198 microstripline | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is |
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BFR106 MSB003 R77/02/pp10 | |
BFR106
Abstract: MSB003
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BFR106 MSB003 R77/02/pp10 BFR106 MSB003 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin |
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BFG10W/X OT343N MBK523 R77/01/pp11 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ403A O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for |
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BUJ303B O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BUJ105A Silicon Diffused Power Transistor Product specification February 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use |
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BUJ105A O220AB | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated |
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BFR93AW OT323 BFR93AW BFR93A. R77/02/pp14 | |
BFR106Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is |
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BFR106 BFR106 MSB003 R77/02/pp10 771-BFR106-T/R | |