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September1995 Datasheets Context Search

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1998 - BFS17A

Abstract: MSB003
Text: specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product , point of the collector pin. September1995 2 Philips Semiconductors Product specification , MHz; measured at f(p+q-r) = 793.25 MHz. September1995 3 Philips Semiconductors Product , = 25 °C. Fig.3 September1995 4 8 12 VCB (V) 16 IE = 0; f = 1 MHz; Tamb = 25 , = 25 °C. Transition frequency as a function of collector current. September1995 10 Fig


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PDF BFS17A September1995 MSB003 BFS17A MSB003
2010 - BFS17A

Abstract: MSB003 E2p transistor
Text: specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor , the temperature at the soldering point of the collector pin. September1995 2 NXP , ; measured at f(p+qr) = 793.25 MHz. September1995 3 NXP Semiconductors Product specification , .3 September1995 4 8 12 VCB (V) 16 IE = 0; f = 1 MHz; Tamb = 25 C. DC current gain as a , of collector current. September1995 10 Fig.6 5 Minimum noise figure as a function of


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PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor
2010 - Not Available

Abstract: No abstract text available
Text: September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A , of the collector pin. September1995 2 NXP Semiconductors Product specification NPN 3 GHz , ; measured at f(p+qr) = 793.25 MHz. September1995 3 NXP Semiconductors Product specification , = 25 C. Fig.3 September1995 4 8 12 VCB (V) 16 IE = 0; f = 1 MHz; Tamb = , ; Tamb = 25 C. Transition frequency as a function of collector current. September1995 10


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PDF BFS17A September1995 MSB003 R77/02/pp9
Not Available

Abstract: No abstract text available
Text: fü HARRIS S E M I C O N D U C T O R HCS154MS Radiation Hardened 4-to-16 Line Decoder/Demultiplexer Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW Yo [ T Y1 24| VCC 23] AO 22] A1 21] A2 20] A3 g g Ë2 Ë1 September1995 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10'9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 Rads (Si


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PDF HCS154MS 4-to-16 MIL-STD-1835 CDIP2-T24 September1995 HCS154MS
1999 - CDFP4-F24

Abstract: HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
Text: HCS154MS Radiation Hardened 4-to-16 Line Decoder/Demultiplexer September1995 Features Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Y0 23 A0 3 22 A1 Y3 · Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse 24 VCC 2 Y2 · Dose Rate


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PDF HCS154MS 4-to-16 September1995 MIL-STD-1835 CDIP2-T24 Y1501 05A/cm2 CDFP4-F24 HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
1995 - CDFP4-F24

Abstract: HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
Text: HCS154MS S E M I C O N D U C T O R Radiation Hardened 4-to-16 Line Decoder/Demultiplexer September1995 Features Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Y0 23 A0 3 22 A1 Y3 · Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse 24 VCC 2 Y2


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PDF HCS154MS 4-to-16 September1995 MIL-STD-1835 CDIP2-T24 05A/cm2 CDFP4-F24 HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
Not Available

Abstract: No abstract text available
Text: HCS154MS S em iconductor Radiation Hardened 4-to-16 Line Decoder/Demultiplexer September1995 Features Pinouts 24 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) M IL-STD-1835 CDIP2-T24 TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10"9 Errors/ Bit-Day (Typ) Ÿo |T Ÿ1 \2_ 23] A0 • Dose Rate Survivability: >1 x 1012 Rads (Si)/s Ÿ2 [3


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PDF HCS154MS 4-to-16 September1995 IL-STD-1835 CDIP2-T24 05A/cm2 HCS154M
1999 - CDFP4-F24

Abstract: HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
Text: HCS154MS Radiation Hardened 4-to-16 Line Decoder/Demultiplexer September1995 Features Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K RAD (Si) · SEP Effective LET No Upsets: >100 MEV-cm2/mg · Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Y0 23 A0 3 22 A1 Y3 · Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse 24 VCC 2 Y2 · Dose Rate


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PDF HCS154MS 4-to-16 September1995 MIL-STD-1835 CDIP2-T24 Y1501 05A/cm2 CDFP4-F24 HCS154DMSR HCS154HMSR HCS154KMSR HCS154MS
29VF040

Abstract: 29VF040-15 29VF040-12 29VF040-10
Text: chip-erase operation SMJS825C - SEPTEMBER1995-REVISED NOVEMBER 1997 Figure 6. Chip-Erase Algorithm 3


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PDF SMJSB25C TMS29LF040, TMS29VF040 29LF040 29VF040 29F040 SMJS820) SMJ3825C 1985-REVISED 29VF040-15 29VF040-12 29VF040-10
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