TRANSISTOR QZ Search Results

u101b

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

BUK426-200A

Abstract: TTPC BUK426-200B
Contextual Info: 7 = 3 ? - / / Philips Com ponents BUK426-200A/B Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic full pack envelope.

D1571

Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

2N7002 MARKING

Abstract: N7002 N-700-2 2N7002 X2N7002 2N7002 v02 RG252
Contextual Info: N-Channet Enhancement-Mode MOS Transistor CORPORATION \J 2N7002 DESCRIPTION ORDERING INFORMATION Calogic's 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown Bv and

MJE12007

Abstract: 221A-04 MJE-12007
Contextual Info: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô | T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white

2SA847

Abstract: 2SA847A knx-1 low noise preamplifier knx1
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse

2n3703

Contextual Info: Qzn&tij aSttnL-ConcLuitoi ZPtoeLata* TELEPHONE: 973 376-2882 203TERNAVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6008 USA FAX: (973) 3764880 2N3703 P-N-P SILICON TRANSISTOR *CASE OUTLINE ALl °'MENSI°NS ir> 1 *' —•- INCHES F -*- ~— 0-015 (NOTE A)

ARDV sot 23

Abstract: DS332P
Contextual Info: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

QM30HA-H

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM30HA-HB 1 S MEDIUM POWER SWITCHING USE _ INSULATED TYPE QM30HA-HB Collector c u rre n t.30A Collector-em itter v o lta g e 6 00V * hFE DC current g a in .

Contextual Info: FAIRCHILD SEMICONDUCTOR May 1996 tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, - high cell density, DMOS technology. This very high

9952a

Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTOR NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

19Sg

Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Contextual Info: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.

Zener diode DW

Abstract: diode 1039 transistor 1039 bav70 transistor zener wafer MMBZ52xxB 1N4148W BAS16TW BAS20W BAV19W
Contextual Info: PRODUCT CHANGE NOTICE Contact Date: February 4, 2005 Implementation Date: Immediate Alert Category: Discrete Semiconductor DCS/PCN-1039 Alert Type: PCN #: Wafer Fab Site Qualification PCN #: 1039 TITLE Qualification of Fabrication Site for Switching, Zener and Small Signal Transistor Wafer

PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Contextual Info: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

transistor qz

Abstract: qm50dy-2h Mitsubishi transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM50DY-2H 1 i MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H 1C V c ex hFE Collector current. 50A C ollector-em itter vo lta g e 1000V DC current g a in .75 Insulated Type UL Recognized

sot-23 MARKING 25J

Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

IBM vga registers

Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
Contextual Info: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color

Contextual Info: FAIRCHILD SEM ICONDUCTO R tm NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P -C hannel Features en ha n ce m e n t m o de pow er field effect • transistors are produced using Fairchild's proprietary, high cell

SWITCHING TRANSISTOR C144

Abstract: TRANSISTOR C144 LQ10D311 C144 TRANSISTOR c144 TRANSISTOR D640 DG136 D639 D639 TRANSISTOR QZ-19-3F01
Contextual Info: LQ10D311 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10D311 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MPD432232L 2M-BIT CMOS SYNCHRONOUS FAST SRAM 64K-WORD BY 32-BIT PIPELINED OPERATION Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 2M-BIT CMOS SYNCHRONOUS FAST 64K-WORD BY 32-BIT PIPELINED OPERATION SRAM Description The ,uPD432232L is a 65,536-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.