TRANSISTOR Q 667 Search Results

Diode marking MFW

Abstract: MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking
Contextual Info: SPB80N10L!M SIPMOSTMPower-Transistor Product Summary Feature RQQ w RetI••J RU Ž Ie YQ b S 2H mfssj q VDS J smfshj rj syrtij Qtln hQj {j q qNupSWTNT 6<: ´H tuj wfyn sl yj ruj wfyzwj F{fqfshmj wfyj i ivP… t wfyj i@M fqtlj s2kwj j fhhtwin sl yt NJ H ;679>27276

Contextual Info: BSR17A _ SILICON PLANAR EPITAXIAL TRANSISTORS N-PTM silicon transistor in a m icro m in ia tu re plastic package intended fo r sw itching and linear applica tions in th ic k and th in -film circuits. Q U IC K R EF E R E N C E D A T A Collector-base voltage open e m itte r

27e transistor

Abstract: iSS TRANSISTOR bd277
Contextual Info: P ow er Transistors File Number 667 HA RR IS S E M I C O N D S E C T O R BD277 27E D • 4 3 0 2 2 7 1 D02a].33 3 « H A S T - 3 3 - 2 -1 7-A, 70-W, Epitaxial-Base, Silicon P -N-P VERSAWATT Transistors For A pp lication s in Series and Shunt Regulators Features:

BD277

Abstract: 1754-3 92CS-I8007
Contextual Info: G E SOLI D 01 STATE 3875081 G E SOLID STATE _ 3075061 01E 0017S4H D •T^ 17542 ~ 7 2/ Pro Electron Pow er Transistors ' File Number 667 BD277 7-A, 70-W, Epitaxial-Base, Silicon

6676 transistor

Abstract: 6676 PTC6677 TO-247 NPN SILICON POWER TRANSISTORS ptc 870 PTC6676
Contextual Info: 02E 00 43 2 .Y.! 61 159 50 M IC R O S E M I C O R P / P O W E R ¿.-i 02 DE |T , 115^ 50 D 00DD435 ö T"- / 3 - / J pJQ 6676P PTC 6677P PTC 6678P |~ Power Technology Components POWERMODE III S E R IE S NPN SILICON POWER > TRANSISTOR 15 AMPERES O 400 VOLTS

NPN power transistor 15A amperes 400 volt

Abstract: PTC6674
Contextual Info: V*. niCRO SEKi CORP/POIilER gg DE J h l l S T S D ODODMaü 1 | PTC 6674P PTC 6675P - f-'-i- V’ ‘.ïr=W - -S'; - V - v ; - - ••• • •:v -r,> -.v-.-iv.v •. v : / -V -V f. : • r , .- T E C H N O LO G Y Power Technology POWERMODE III SERIES

Contextual Info: Order this document by MC33468/D MOTOROLA M C 33468 V ariable Frequency M icropow er S tep-up DC-DC Converter The MC33468 is a micropower ste p -u p switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

L2 SOT-23-5

Abstract: sot-23-5 marking cy motorola step down voltage regulator
Contextual Info: Order this document by MC33468/D M M O TO R O LA V ariable Freq u en cy M icropow er Step -u p D C -D C C onverter The MC33468 is a micropower step-up switching voltage regulator, specifically designed for handheld and pager applications, to provide a regulated output voltage using a minimum of external parts. This device

10N100E

Contextual Info: MOTOROLA O rder this docum ent by M TW 10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TW 10N 100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 10 AMPERES

Contextual Info: MOTOROLA O rder th is docum ent by MTY10N1OOE/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T Y IO N IO O E TMOS E-FET ™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET

transistor k702

Abstract: transistor k703 transistor k79 transistor k215 TRANSISTOR K550 K206 transistor Transistor k822 CN701 transistor k620 transistor k230
Contextual Info: ORDER NO. CPD0603076C0 Notebook Computer CF-18 This is the Service Manual for the following areas. Z …for PCPE /CPE Model No. CF-18JHUZBZZ 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.

Contextual Info: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Prelim inary Data Bipolar-IC Features • • • • • • • • • • 2 x 1 amp. full bridge outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 45 V

SMPS 666

Contextual Info: Philips Semiconductors Product specification Powerll/IOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,

kbr 4.0M

Abstract: TM 511720 TI 51173 transistor LC6523
Contextual Info: Ordering number: EN%5117 CMOS LSI No. * 5117 LC6529N, 6529F, 6529L 4-Bit Microcomputer for Small-Scale Control Applications Preliminary Overview The LC6529N/F/L provides the basic architecture and instruction set of the Sanyo LC6500 Series of 4-bit single­

BFQ42

Abstract: SI 3105 A choke 663 transistor t07 BLW29 ferroxcube wideband hf choke
Contextual Info: 711002t. Q0b31ôl G7Q BIPHIN bSE D BLW29 J PHILIPS V. INTERNATIONAL V.H.F. POW ER TRAN SISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

4728

Contextual Info: SIEMENS 2-Phase Stepper-Motor Driver TLE 4728 Preliminary Data Bipolar-IC Features • 2 x 1 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Overvoltage cut-out

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

M51143AL

Contextual Info: MITSUBISHI SOUND PROCESSORS M51143AL TAPE PROGRAM SELECTOR CIRCUIT DESCRIPTION The M51143AL is an integrated circuit designed for use as a tape program selector. PIN CONFIGURATION TOP VIEW 8 | Vcc It consists of a limiter amplifier, a signal detector circuit,

transistor tt 2222

Abstract: 9 BJE 53 mj 1504 transistor BFQ42 mj 1504 BLW29 tt 2222 transistor l5
Contextual Info: • bbSBTBl OOSTSflM ÔG7 H A P X N AtlER PHILIPS/DISCRETE BLW29 b*ÎE T> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. Because o f the high gain and excellent power