TRANSISTOR PT 42 Search Results

2SC5454

Abstract: ic n 3856
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS in mm • High gain, low noise +0.2 Emitter to Base Voltage VEBO 2 V Collector Current IC 50 mA Total Power Dissipation PT 200 mW

Contextual Info: SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • TO-92 High total power dissipation. PT=625mW High Collector Current. (lc =500mA) Complementary to SS9012 Excellent hFE linearity.

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

powertech

Contextual Info: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A

2SK514

Abstract: d1352 C982 M-0258 MA 7824 T460-8525 FT010 ra022 2sk514 transistor transistor 2sk514
Contextual Info: iM u m y ? > > * * Junction Field Effect Transistor 2SK514 * at H M W W t i L l m • 4.0 ± 0 .1 I 1 .0 * 0 ,2 T a =25 bC) K r - h • k h r - > n n * flE 4 r - > * h £ m m -50 V Vqso -50 V Vpsx * 50 V at Id 20 raA « Ig 10 mA * Pt 250 mW Tj 125 X > ; x a > a #

2N4854

Contextual Info: 2N4854U Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N4854U device in a low profile 6-pin U package is military qualified up to a JANTXV

Contextual Info: 2N3838 Available on commercial versions NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/421 DESCRIPTION This 2N3838 device in a 6-pin Flatpack package is military qualified up to a JANTXV level for

Contextual Info: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:

MIL-STD-1686

Abstract: LP1500 LP1500SOT223 P100 noise gate compression
Contextual Info: Filtronic LP1500SOT223 Low Noise, High Linearity Packaged PHEMT Solid State FEATURES • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range

D44R4

Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

2N5305

Abstract: 2N5356 BC pnp 200mA npn 940 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

TRANSISTOR 185 846

Abstract: transistor b 1417 415 TRANSISTOR transistor 415 powerex ks62
Contextual Info: muBsx POlilEREX INC 3RE » • r'lZ 'lZ 7S^Mb21 OOOHQlb 1 H P R X KS621K40HB Powerex, Inc., M ills Street, Youngwood, Pennsylvania 75697 412 925-7272 High Beta Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 S iH Q le

powerex ks62

Abstract: transistor 600 volts 60 amperes LB800
Contextual Info: POWEREX INC mama 3TE » • TSTHbEl DD04D34 3 « P R X T'33-35" KS621K60HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 75697 412 925-7272 High-Beta Powerex Europe, S.A., 428 Averne G. Durand, BP1Q7,72003 Le Mans, Franca (43) 41.14.14 S itìQ le

2N4854

Abstract: 2N4854U ADC-03 2n4854 to-78
Contextual Info: TECHNICAL DATA 2N4854 JTX, JTXV 2N4854U JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/421 DEVICES NPN/PNP SILICON COMPLEMENTARY SMALL-SIGNAL DUAL TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

powerex ks62

Contextual Info: TSTMbSl POlilEREX INC QDGa^b IPRX 1 KS621230HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 High-Beta Single Darlington Transistor Module 300 Amperes/1200 Volts

KD225575

Abstract: powerex kd22 kd2255
Contextual Info: 3*iz POUEREX INC m u m d • 75tm b s i DDomññ a mpRx r- 3 3 - 3 s " KD225575 * Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 . D U S l D S tH n O tO H

transistor k 4212

Abstract: KS624540 1S697 BP107 of transistor C 4212 powerex ks62
Contextual Info: KS624540 Powe rex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 1 High-Beta Single Darlington Transistor Module 400 Amperes/600 Volts Description US THO

transistor MUI

Abstract: b-prx kd32 KD325
Contextual Info: POlilEREX INC m V D E R E X TBTMbEl QQQMSEM ô I1PRX _ KD325510 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 D U â l D S tlitlO tO tl Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, Fiance (43) 41.14.14

d40p3

Abstract: D40P5 tab ic D40P1 D42R3 tab 229 D40N1 D40N2 D40N3 D40N4
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

ke92

Abstract: 1Ft TRANSISTOR hb595 ke921k05
Contextual Info: m¥EREX P O W E R E X INC B^E T> m T B T H b S l O G D M M b O 'ì H P R X Powerex, Inc., Hlllls S tre e t, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE921K05HB r - 3 3 -35"

KS624550

Abstract: ksF22005 KS524503HB KS8245 KS824501HB KS524502HB KS621280HB ks52 ksf220 ksf2
Contextual Info: 3*iZ P O U E R E X INC m /m a c D • 7S=JMb21 G 0 0 3 7 M 5 T B I P R X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 9 2 5 - 7 2 7 2 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41,14.14

400HA-12E

Abstract: CM100TF-12e
Contextual Info: POliJEREX I NC BTE I> • 72=^21 DDG37SS 1 HPRX T^2 W HHBSX_ _ Powerex, Inc., HilUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 EFFICIENT E-SERIES IGBTMOD TRANSISTOR POWER MODULES

mp4001

Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
Contextual Info: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and

KE7245A1

Abstract: diode 345
Contextual Info: 3RE D POWEREX INC • 7SSMb21 Q0DM3Ô2 M H P R X mNWDL KE7245A1 Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module