TRANSISTOR P2 MARKING Search Results

BFR92

Abstract: BFR92A BFR92 transistor transistor p2 marking
Contextual Info: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,

FMMT591A

Abstract: FCX491A FCX591A MARKING 93 SOT89 DSA003685
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FCX591A ISSUE 3 - OCTOBER 1995 PART MARKING DETAIL COMPLEMENTARY TYPE - C P2 FCX491A B ABSOLUTE MAXIMUM RATINGS. C E PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO

telefunken IC

Abstract: marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392
Contextual Info: S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Marking: P2 Plastic case SOT 23 Absolute Maximum Ratings

BFR92A

Abstract: sot-23 transistor p2 marking BFR92AR
Contextual Info: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking: + P2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

MAR 641 TRANSISTOR

Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
Contextual Info: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

BFR92a MARKING P2

Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Contextual Info: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

4P04L06

Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
Contextual Info: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1

4p03L11

Contextual Info: IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on ,max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4P03L07

Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
Contextual Info: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

4P03L04

Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
Contextual Info: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

IPP120P04P4-04

Abstract: 340ua IPI120P04P4-04 4P04
Contextual Info: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

4P04L11

Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4P04L11

Abstract: IPD50P04P4L-11
Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4p03L11

Abstract: 4p03l DIODE smd marking Ag IPB45P03P4L-11 IPI45P03P4L-11 IPP45P03P4L-11 PG-TO263-3-2 4p03
Contextual Info: IPB45P03P4L-11 IPI45P03P4L-11, IPP45P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 10.8 mΩ ID -45 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1

Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4QP04L02

Abstract: IPB180P04P4L-02
Contextual Info: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4L-02 Product Summary V DS -40 V R DS on ,max 2.4 mW ID -180 Features A PG-TO263-7-3 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

Contextual Info: BSL215P OptiMOS P2 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V VGS=-4.5 V 150 mW VGS=-2.5 V 280 ID -1.5 • Avalanche rated A PG-TSOP6 • Qualified according to AEC Q101

Contextual Info: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23

IPD90P04P4-05

Abstract: 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405
Contextual Info: IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

4P0409

Abstract: IPD70P04P4-09 IPD70P04P4
Contextual Info: IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

ipd80p03

Abstract: IPD80P03P4L-07 PG-TO252-3-11 8712-M IPD80P03P4L07
Contextual Info: IPD80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on 6.8 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO252-3-11 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

Contextual Info: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

4-P-04

Contextual Info: IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 6.4 mW ID -85 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

4P03L04

Abstract: 4p03 IPD90P03P4L-04 D-90A d90a PG-TO252-3-11 4P03L
Contextual Info: IPD90P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on 4.1 mΩ ID -90 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)