TRANSISTOR OUTLINES Search Results

foto sensor

Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor

MDA380

Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in

Contextual Info: UM10559 BFU6xx/BFU7xx Transistor Starter Kit Users Manual Rev. 1.0 — 21 March 2012 User manual Document information Info Content Keywords BFU610F,BFU630F, BFU660F, BFU690F, BFU710F, BFU725F/N1, BFU730F, BFU760F, BFU790F, Starter Kit, OM7827 Abstract This document outlines the contents of the BFU6xx/BFU7xx Transistor

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

BST70A

Abstract: j s switching transformer mos transistor equivalent book BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST70A N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST70A QUICK REFERENCE DATA

lm 9805

Abstract: smd transistor marking B3 smd transistor marking DK diode SOT89 smd marking B mumbai SMD Transistor 6f BP317 BST120 transistor smd marking dk Transistor lm 358
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

BP317

Abstract: BSP89 MBB691 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP89 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

IC 3130

Abstract: 4110 P525 Q62702-P5250 GEOY6976
Contextual Info: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2n3439ua

Abstract: SFT343 SMD.22
Contextual Info: SFT3439S.22 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 A /450 Volts NPN Switching Transistor DESIGNER’S DATA SHEET SMD.22 Features: • Switching Transistor

marking 705

Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2042A

Abstract: 2039 transistor SC-46 220kf 2049B
Contextual Info: TRANSISTOR CASE OUTLINES Case Outline 2003A unit: mm Case Outline 2042A T0126M L Case Outline 2039 Case Outline 2049B (unit: mm) T0220M F Case Outline 2048A {unit: mm) 0,44 2.0 0.» ob \ -»C *4.0— B: Base Cr Collector E: Emitter JEDEC : TO-92 EIAJ : SC-43

BSN274

Abstract: BSN274A BP317 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

4227t

Abstract: 2043A TRANSISTOR R 2453
Contextual Info: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain

TE1135

Abstract: TE1307 TE1055 TRANSISTOR DH 30 30D106
Contextual Info: TE Vishay Sprague Aluminum Capacitors Little-Lytic Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits. • All terminal connections welded, eliminating possibility of

Contextual Info: lEE DI 7cïT?G?k OODSma 5 SANYOSEMICONDUCTORCORP r-sv-i/ 2SD1655 NPN Triple Diffused Planar Silicon Transistor 2039 Color TV Horizontal Deflection Output Applications 1753B Applications . High-voltage, power switching Features . Fast speed tfinaxsO.Hus .

Contextual Info: FDG313N Digital FET, N-Channel General Description Features This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state

ZTX415

Abstract: AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
Contextual Info: Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction to Characteristics, Performance and Applications Neil Chadderton Introduction Avalanche mode devices can provide extremely high switching speeds and are capable of producing current outputs

2SK376

Abstract: DDD3710 VLN 2003a
Contextual Info: SANYO SEMICONDUCTOR CORP 1B E » 1 i m U l h 0D0S3Û0 2SK376 N-Channel Junction Silicon Field-Effect Transistor 2037 1432A Capacitor Microphone Impedance Conversion Applications Features . Especially suited for use in audio, telephone capacitor microphones.

OPTIMOS

Abstract: OPTIMOS TRANSISTOR TO220 package infineon 13mOhm bts1205 ANPS062E Application Report mosfet ptc fuel level sensor
Contextual Info: Application Note, V 1.0, August 2001 ANPS062E Product News OptiMOS ✚  state of the art field effect transistor switches offering new features by Christian Arndt Automotive Power Never stop -1- thinking. ANPS062E OptiMOS✚ - temperature sensing MOSFET switch