IPA60R600C6 Search Results
IPA60R600C6 Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPA60R600C6 |
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 600.0 mOhm; ID(max) @ TC=25°C: 7.3 A; IDpuls (max): 19.0 A; | Original | 1.88MB | 18 | ||
| IPA60R600C6XKSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 7.3A TO220-FP | Original | 1.26MB |
IPA60R600C6 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPA60R600C6XKSA1Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPA60R600C6XKSA1 | 6,130 |
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