IPP60R280C6 Search Results
IPP60R280C6 Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPP60R280C6 | Infineon Technologies | N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 600.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 280.0 mOhm; ID(max) @ TC=25°C: 13.8 A; IDpuls (max): 40.0 A; | Original | 1.68MB | 19 | ||
| IPP60R280C6XKSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 13.8A TO220 | Original | 1.58MB |
IPP60R280C6 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPP60R280C6XKSA1Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP60R280C6XKSA1 | 553 | 1 |
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IPP60R280C6XKSA1 | 9,579 |
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