TRANSISTOR OSF Search Results

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

transistor JE 1090

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

Contextual Info: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

Contextual Info: ZXTP2012G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK101-50DL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power M OSFET in a 3 pin plastic envelope, intended as a general

philips diagram fr 310

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ _ DESCRIPTION Monolithic temperature and overload protected power switch based on M OSFET technology in a 5 pin plastic envelope, configured

Contextual Info: ZX5T951G 60V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

sem 2005 ic equivalent

Contextual Info: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line

Contextual Info: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and

Contextual Info: • bbS3^31 0Q24b71 52b H A P X N AUER PHILIPS/DISCRETE BF660 b7E » ; v SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with M OS-FETs in thick and thin-film circuits.

BUK436-1000B

Contextual Info: N AMER P H I L I P S / D I S C R E T E b'ìE D • ^53*131 D03047S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Transistor Bo 17

Contextual Info: Product Specification Philips Sem iconductors PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power M OSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.

BUK455-400B

Abstract: T0220AB
Contextual Info: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

maximum drain voltage of FET 3N143

Abstract: 3N128 equivalent 3N128 FET 3N143 RCA-3N128 AN-3193 rca an3193 TA2840 "rca application note" RCA Solid State amplifier
Contextual Info: G E S OLID STATE 3875081 01 G E SO LID STATE DE § 3 0 7 5 0 0 1 01E 14.984 0014^04 5 Dj Small-Signal M „ _ 3N128, 3N143 Silicon MOS Transistor For Amplifier Mixer & Oscillator Applications in Military &

TRANSISTOR C 5387

Abstract: C 5387
Contextual Info: Ordering num ber:E N 5387 _ FX901 N o.5387 P N P Ep itaxial Plan ar Silicon Transistor N-Channel M O S Silicon F E T Silicon Schottky B a rrie r Diode DC/DC C onverter A pplications F e a tu re s •Composite type w ith a P N P transistor and a 2.5V drive N-channel M O SFE T w ith a built-in low

mosfet ir 840

Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Contextual Info: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65

IC5011

Abstract: 4515V irf530g
Contextual Info: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit