TRANSISTOR NPN VCBO 25V Search Results

NTE69

Contextual Info: NTE69 Silicon NPN Transistor UHF/VHF Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

2N3393

Abstract: CON10 MICRO ELECTRONICS ltd transistor
Contextual Info: 2N3393 NPN SILICON TRANSISTOR DESCRIPTION 2N3393 is NPN silicon planar transistor designed as small signal amplifiers. ABSOLUTE MAXIMUM RATINGS VcEO VcBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation

NTE344

Contextual Info: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

NTE344

Contextual Info: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Contextual Info: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A

IC 386

Abstract: CB transmitter NTE302
Contextual Info: NTE302 Silicon NPN Transistor AM, CB Transmitter Driver, Switch Description: D 27−MHz AM CB Transmitter Driver Stage Switch Absolute Maximum Ratings: Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: | e BC818 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Symbol R ating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KST10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit VCBO

Contextual Info: MPSH10 MPSH11 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . ~~ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T aniW S X Symbol R ating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage

NTE315

Abstract: 10MHZ
Contextual Info: NTE315 Silicon NPN Transistor, Medium Power Amp Features: D AF – HF Medium Power Amplifier Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

KSP10

Abstract: KST10
Contextual Info: KST10 KST10 VHF/UHF Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector Base Voltage 30 V VCEO Collector-Emitter Voltage

Contextual Info: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 30 Units V V VCEO Collector-Emitter Voltage

ksp10

Abstract: c 458 c transistor Transistor B C 458
Contextual Info: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage

KSP10

Contextual Info: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage

Contextual Info: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

KSP10

Contextual Info: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage

KST10

Abstract: KSP10 MARKING 3E
Contextual Info: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

KSP10

Abstract: "vhf,uhf transistor"
Contextual Info: KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO PC PC Parameter Value 30 Units V Collector-Emitter Voltage

JB marking transistor

Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
Contextual Info: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo

Contextual Info: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage VcBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage

2SD1478

Abstract: 2SD1478A
Contextual Info: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO

2SD1478

Abstract: 2SD1478A
Contextual Info: Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Symbol Collector to 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO

BC337

Abstract: BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter