TRANSISTOR NPN FOR 12 V Search Results

UNA0235

Abstract: UN235
Contextual Info: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2

VHB100-12

Abstract: ASI10719
Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.

BUV21

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

BU108

Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A

Contextual Info: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A

UNA0233

Abstract: UN233 TRANSISTOR 1502 npn
Contextual Info: Small Signal Transistor Arrays UNA0233 Silicon PNP epitaxial planar transistor 3 elements Silicon NPN epitaxial planar transistor (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C PNP NPN Overall 0.5 4 5 6 7 0.9±0.1 Symbol

2SC5180

Abstract: 2SC5180-T1 t84 marking PU10517EJ01V0DS
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • Low current consumption and high gain 2 S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

HF100-12

Abstract: ASI10599
Contextual Info: HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme

Siemens 1736

Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

MM1505

Contextual Info: MM1505 silicon NPN SILICON SWITCHING TRANSISTOR . designed plications. primarily for high-speed, saturated NPN SILICON SWITCHING TRANSISTOR switching ap­ • High Speed Switching Times @ I q = 10 m Adc — ton < 12 ns (Max) toff < 12 ns (Max) « M A X IM U M R A T IN G S

Contextual Info: Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type 3 elements Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general 12° 12 3 NPN Overall 0.8 1.5±0.1 1.5+0.2 –0.1 6.5±0.3

0930 IC

Contextual Info: PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW

B12-12

Abstract: 2N5590 B1212 MT-72 MT-72 package 32fl02
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5590/B12-12 Silicon NPN power VHF transistor 2N5590/B12-12 is designed for amplifier, frequency multipliers and oscillator applications in industrial and commercial equipment. Especially suited for AM/FM land and mobile operation.

transistor j13009-2

Abstract: J13009-2 j13009 2 FJP13009
Contextual Info: FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is

Germanium Transistor

Abstract: Germanium power ON5088,115
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BUV26

Abstract: V50B
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high–speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

CASE 221A Style 1

Abstract: BUV26
Contextual Info: BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high−speed applications such as: • • • • Switchmode Power Supplies High Frequency Converters Relay Drivers Driver http://onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS

UNA0234

Abstract: UN234
Contextual Info: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar transistor 4 elements Silicon NPN epitaxial planar transistor (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 12° 0.3±0.1 16 151413121110 9

NEC 1357

Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz

2SC5015

Abstract: 2SC5015-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation

2SC5786

Abstract: 2SC5786-T1 marking UE marking 654 3pin nec 1299 662
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

BUV27

Contextual Info: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS

transistor marking MH

Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH
Contextual Info: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS

baw 92

Abstract: MPS2369 PP116
Contextual Info: MPS2369 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR . . . designed for use ¡n high-speed, low-current switching applications. • Low O utp ut Capacity • Fast Switching Time @ lc = 10 mAdc t on =! 12 #is (Max) • High Current*Gain—Bandwidth Product