TRANSISTOR NPN 1854 Search Results

3B2S

Abstract: MRF428
Contextual Info: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power

MRF325

Abstract: BH rn transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON

2SC3661

Abstract: ITR05768 ITR05769 ITR05770 ITR05771 ITR05772 MARKING FY VEBO-15V
Contextual Info: Ordering number:ENN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018B [2SC3661]

2SC3661

Abstract: MARKING FY VEBO-15V N209 Low frequency general-purpose amplifiers,
Contextual Info: Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers, muting circuit. unit:mm 2018A [2SC3661]

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

HPG800

Abstract: 1854a
Contextual Info: Ordering n u m b e r:EN 1854A No.1854A _ 2SC3661 NPN Epitaxial Planar Silicon Transistor High h/pE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,

MRF846

Contextual Info: ^emi-Conduatoi ^Product*, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF846 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF846 is Designed for UFH Large-Signal, Common Base Amplifier

BLW76

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E

Contextual Info: 10 aunt i, One. 'J.£ii£.u J Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW83 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW83 is Designed for use in transmitting amplifiers operatimg in

MRF646

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 45 W - 470 MHz CO NTRO LLEDQ RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTO R NPN SILICON . . . designed fo r 12.5 V o lt U H F large-signal a m p lifie r a p p lic a tio n s in in d u s tria l and c o m m e rc ia l F M e q u ip m e n t o p e ra tin g to 5 1 2 M H z.

transistor k08

Abstract: k08 transistor
Contextual Info: O rd e rin g n u m b e r: EN 1 8 5 4 A | 2SC3661 N o .1 8 5 4 A NPN Epitaxial Planar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications Applications . Low frequency general-purpose amplifiers, drivers, muting circuit Features . Very small-sized package permitting 2SC366l-used sets to be made smaller,

IC 7408

Abstract: IC 7812 REGULATOR IC 7812 IC TTL 7400 NEC d446c d446c data sheet IC 7408 ic 74151 IC 74153 REGULATOR IC 7912
Contextual Info: 1 of 8 Home Up Hewlett-Packard Part Number to Industry Standard HP Part Number DESCRIPTION Equivalent Part Number 1810-0076 SIP Resistor Network, 1K8 x 8 no industry number 1810-0307 RESISTOR ARRAY 316-101 100 ohms AB 1816-1104 1K ROM HP1350 Char. Gen. no industry number

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: ¡SSI IS22C011 8 to 12 SEC INSTANT VOICE ROM SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

SDX30D4 Pressure Sensors in 6 pin dip package

Abstract: 657-A1004SS22P0 785-SS41 HIH-4021 HGDEPM021A HGDESM021A 785-CSLA1CF 653-E2AM18KS08WPB1 A1004BT22P0 SS94A1
Contextual Info: SENSORS Motion & Position Sensors ALPS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1834 BEI Duncan. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1835

"Voice Playback"

Abstract: IS22C011 IS22C011S IS22C011X
Contextual Info: IS22C011 8 to 12 SEC INSTANT VOICE ROM SEPTEMBER 1997 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all

wabash relay

Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
Contextual Info: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

IS22C011

Abstract: IS22C011P IS22C011S IS22C011X
Contextual Info: ISSI IS22C011 ISSI IS22C011 8 to 12 SEC INSTANT VOICE ROM ® SEPTEMBER 1997 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections

IS22C011

Abstract: IS22C011P IS22C011PI IS22C011S IS22C011SI IS22C011X IS22C011XI
Contextual Info: ISSI IS22C011 ISSI IS22C011 8 to 12 SEC INSTANT VOICE ROM ® OCTOBER 1998 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections

5V piezo buzzer

Abstract: transistor npn 1854 IS22C011 IS22C011P IS22C011X
Contextual Info: ISSI ISSI IS22C011 IS22C011 8 to 12 SEC INSTANT VOICE ROM ® SEPTEMBER 1996 FEATURES • Voice length at: – 8 KHz sampling is 8 seconds – 6 KHz sampling is 10 seconds – 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections