TRANSISTOR MU Search Results

Contextual Info: MJE13007 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec T0-220

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

6r950c6

Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6

mje13007a

Contextual Info: MJE13007A SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220

SMUN5211DW

Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
Contextual Info: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are

Transistor morocco mje13007

Abstract: ST MJE13007 MJE13007 ST MJE13007 MJE-13007 mje13007 equivalent
Contextual Info: MJE13007  SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220

RN1544

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications. • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

u101b

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package

BUR51

Abstract: ms80A transistor case To 106
Contextual Info: BUR51 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.

BUR51

Contextual Info: SGS-THOMSON BUR51 HIGH CURRENT NPN SILICON TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.

Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

RN1544

Abstract: MARKING 44a
Contextual Info: RN1544 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1544 For use in Muting and Switching Applications Unit: mm • Emitter-base voltage is high: VEBO = 25 V (max) • Incorporating a bias resistor into a transistor reduces parts count.

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

diode marking SJ

Abstract: JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

65C6070

Abstract: infineon MOSFET parameter test diode marking SJ 65C6 ipw65r
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPW65R070C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,

TPCP8F01

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

PUMF12

Abstract: MCE153
Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor

PUMF11

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor

TPCP8H01

Abstract: 8H01
Contextual Info: TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 HIGH-SPEED SWITCHING APPLICATIONS LORD SWITCHING APPLICATIONS STROBE FLASH APPLICATIONS 0.33±0.05 0.05 M A 2.4±0.1 ・Multi-chip discrete device; built-in NPN transistor for main switch and

MUN5111T1

Abstract: MUN5111T1G MUN5112T1G MUN5113T1G MUN5113T3G MUN5114T1G MUN5115T1G MUN5116T1G
Contextual Info: MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

transistor 6R385P

Abstract: 6r385 6R385P IPL60R385CP 6r385p infineon 6R38 ipl60r VDD480 transistor smd marking Ag g1 smd diode
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast