TRANSISTOR MOTOROLA 418 Search Results

305 Power Mosfet MOTOROLA

Abstract: Transistor motorola 418 MGW30N60
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MGY30N60D

Contextual Info: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

AN569

Abstract: MTB50N06V SMD310
Contextual Info: MOTOROLA Order this document by MTB50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB50N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate

TMOS E-FET

Abstract: MTB52N06V SMD310 AN569
Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TB30P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount M TB30P06V Motorola Preferred Device TM OS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.080 OHM

Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB52N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.022 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB52N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06VL TMOS V™ Power Field Effect Transistor D2PAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

06vl

Contextual Info: MOTOROLA Order this document by MTB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

Contextual Info: MOTOROLA O rder this docum ent by M TB52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB52N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance

CIL TRANSISTOR 188

Contextual Info: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S V™ MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new technology designed to achieve an on-resistance

CNY17-1 Opto-isolator

Abstract: CNY17-2 Opto-isolator CNY17-2 VDE0160 VDE0832 VDE0833 cny17.2 package details
Contextual Info: MOTOROLA •i SEM ICONDUCTOR TECHNICAL DATA CINIY17-1 CNY17-2 CNY17-3 6-Pin DIP Optoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • •

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •

AN569

Abstract: MTB15N06V SMD310
Contextual Info: MOTOROLA Order this document by MTB15N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTB15N06V Designer's TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N–Channel Enhancement–Mode Silicon Gate

4N38

Abstract: 4N38A VDE0160 VDE0832 VDE0833 motorola transistor 614
Contextual Info: MOTOROLA H SEM ICONDUCTOR TECHNICAL DATA 4N38 4N38A 6-Pin DIP Optoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • • • Convenient Plastic Dual-in-Line Package

Contextual Info: MOTOROLA O rder this docum ent by M TB15N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet T M O S V™ M TB15N06V Power Field Effect Transistor D2PAK for Surface Mount TM OS POWER FET 15 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

MTB29N15E-D

Abstract: S 170 MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TM O S E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

4N25 6 pin dip optoisolator

Abstract: 4N25 4N25A VDE0113 VDE0160 VDE0832 VDE0833 4N27 Opto-isolator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 25 4N 25A 4N 26 4N 27 4N 28 6-Pin DIP Optoisolators Transistor Output T h e se d e vices co n sist of a galliu m arse n id e infrared em itting d iod e optically co up led to a m on olith ic silic on p h o to tran sisto r detector.

transistor KJJ

Abstract: H11A41 VDE0860 H11A1 VDE0113 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11A1 thru H11A5 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o up le d to a m o n o lith ic s ilic o n p h o to tra n s is to r detector.

H11D1

Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
Contextual Info: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,

VDE0860

Abstract: IEC435 VDE0113 VDE0160 VDE0805 VDE0832 VDE0833 VDE0883 OPTO-ISOLATOR optoisolator MCT2E
Contextual Info: MOTOROLA • i S E M IC O N D U C TO R TECHNICAL DATA M C T2 M CT2E 6-P in D IP O p to is o la to rs Transistor Output These device s co n s is t o f a g a lliu m arsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic s ilic o n p h o to tra n s is to r dete cto r.

MQC8100

Abstract: motorola ic 6116 ci 6116 VDE0113 VDE0160 VDE0832 VDE0833 optoisolator IC Opto-isolator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 -P in D IP O p to is o la to r MOC8100 Transistor Output This device co nsists o f a g a lliu m a rsen id e in fra re d e m ittin g d io d e o p tic a lly c o u p le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r. It is d e sig n e d fo r a p p lic a tio n s re q u irin g lo w

MOC8204

Abstract: MOC8205 VDE0160 VDE0832 VDE0833
Contextual Info: MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA M O C 8204 M O C 8205 M O C 8206 6 -P in D IP O p t o is o la t o r s Transistor Output . . c o n sist of ga lliu m -a rse n id e infrared em itting d io d e s optically co up led to h igh voltage, silicon, p h o to tra n sisto r detectors in a stan d ard 6-pin D IP package. T h e y are d e sig n e d for

MRD300

Abstract: To18 transistor motorola reliability MRD310
Contextual Info: MOTOROLA •■ S E M IC O N D U C T O R TECHNICAL DATA M RD 300 M RD310 P h o to D e te c to rs Transistor Output . . . d esig ne d fo r a p p lic a tio n in in d u s tria l in sp e ctio n , p roce ssing and c o n tro l, c o un ters, s o rte rs, s w itc h in g a nd lo g ic c irc u its o r any d esig n re q u irin g ra d ia tio n s e n s itiv ity , and sta­