TB23P06V Search Results

Contextual Info: MOTOROLA O rder this docum ent by M TB23P06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB23P06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 23 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate

TB23P06V

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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB23P06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount Motorola Pr»f«rr*d Dovtce TMOS POWER FET 23 AMPERES 60 VOLTS ROS on = 0.120 OHM P-Channel Enhancement-Mode Silicon Gate

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Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”