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    TRANSISTOR MARKING Z9 Search Results

    TRANSISTOR MARKING Z9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR MARKING Z9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S74B

    Abstract: NP5J TRANSISTOR MARKING YB 2SC3065 2SC306 LN 2003a
    Contextual Info: SANYO SEMICONDUCTOR CORP 3S E D ? cic]7D7t DDGflflm 1 wa .T-Z9-27 NPN Epitaxial Planar Silicon Composite Transistor 2 029A Differential Amp Applications S74B Applications . Differential amp, current mirror. . Features . Excellent in thermal equilibrium differential amp.


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    t-91-20sc-43s74bnp5j+4transistor marking yb2sc30652sc306ln 2003a PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    lcd01bfg55aphilips discrete a440ic05 philips+3a1211 lgsmd marking code algbst60 PDF

    Contextual Info: XC6602 Series ETR03045-005 1A, 0.5V Low Input Voltage, High Speed LDO Regulator GENERAL DESCRIPTION The XC6602 series is a low voltage input 0.5V operation and provides high accuracy ±15mV/±20mV and can supply large current efficiently due to its ultra low on-resistance even at low output voltages.


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    xc6602etr03045-00515mv/ PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    q9001-1994icmsh1-20mlpnp transistor smd ba rntransistor marking code 12w sot-23+8smd transistor marking p69transistor smd marking code s2atransistor smd bc rntransistor smd marking code bc ru1ff transistor smd marking codesmd transistor p2dmotorola transistor smd marking codessmd transistor marking p28 PDF

    BST84

    Abstract: z940 w200V
    Contextual Info: • N bbSBTBl AMER DDESb53 ITß *APX PHILIPS/DISCRETE b?E BST84 T> N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter­ rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.


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    bb53t31ddesb53bst84z94045+3rdsonat25z940w200v PDF

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    od-80ot-223ot-89stk and str integrated circuits+9transistor smd zg 1estr-z4579turuta6 pin transistor smd code patransistor 5d smdelm85361astk and str integrated circuits, 2011 edition5g smd transistor15d diode smd code PDF

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    mrf9002nt1mrf9002r2transistor a113a113 transistor+4transistor marking z11marking j9j133 transistorc series transistor equivalent table PDF

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    197/197xs310nw1p 59 transistorw1p 48 transistor+8transistor w1p 83icm ap 1703transistor smd marked rnwtransistor bd139 ph 71w1p 66 transistortransistor w1p 91pnp transistor smd ba rnw1p npn PDF

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    mrf9002nr2pfp-16mrf9002r2on semiconductor j122 PDF

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    mrf9002r2mrf9002nr2pfp-16j133 mosfet transistor+7transistor j239on semiconductor j122transistor marking z9j122 markingj133 transistorro4350mosfet j133 PDF

    MRF9002NR2

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    mrf9002r2mrf9002nr2pfp-16 PDF

    J133 mosfet transistor

    Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
    Contextual Info: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


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    mrf9002nt1mrf9002r2j133 mosfet transistoron semiconductor j122+3transistor a113a113 transistormarking transistor rf PDF

    power transistor unit j122

    Abstract: MRF9002NR2
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


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    mrf9002nr2power transistor unit j122 PDF

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


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    bfs362n930bs9365baw63+11bs9302bfs36a2n929baw63abc109 transistor equivalent listnpn transistor w62n2484 equivalent transistorstransistor equivalent table bc109transistor bc109ztx341f021 PDF

    MRF9002NR2

    Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


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    mrf9002nr2marking us capacitor pf l1marking z4a113+2ro4350transistor a113 PDF

    MRF9002NR2

    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


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    mrf9002nr2pfp-16 PDF

    MRF9002NR2

    Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
    Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


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    mrf9002nr2a113ro4350mosfet j133+2j239j122 marking PDF

    MRF9002NR2

    Abstract: RO4350 J104 J158
    Contextual Info: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


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    mrf9002nr2pfp-16ro4350j104+1j158 PDF

    Step-Down

    Abstract: XC9254
    Contextual Info: XC9254R Series ETR0529-003 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converter ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9254R series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42ΩP-channel MOS driver


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    xc9254retr0529-003600maxc9254r001+2step-downxc9254 PDF

    free capacitor

    Abstract: MARK PC SOT-25
    Contextual Info: XC9254R Series ETR0529-002 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converter ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9254R series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42ΩP-channel MOS driver


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    xc9254r600maetr0529-00242p-channel+452n-channelxc9254r001free capacitormark pc sot-25 PDF

    XC9254R

    Abstract: XC9254R001 transistor 6c x NR3015 NR4018 mos switch 600mA XC9254
    Contextual Info: XC9254R Series ETR0529-001 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converter ☆GreenOperation Compatible Preliminary •GENERAL DESCRIPTION The XC9254R series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42ΩP-channel MOS driver


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    xc9254retr0529-001600ma42p-channel+752n-channelxc9254r001transistor 6c xnr3015nr4018mos switch 600maxc9254 PDF

    Contextual Info: XC9254R Series ETR0529-001a 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converter ☆GreenOperation Compatible Preliminary •GENERAL DESCRIPTION The XC9254R series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42ΩP-channel MOS driver


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    xc9254retr0529-001a600maxc9254r001 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350 PDF

    2SJ465

    Contextual Info: TOSHIBA 2SJ465 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ465 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX.


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    2sj465-200jua PDF