TRANSISTOR MARKING XF Search Results

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23

Q62702-C2445

Contextual Info: BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 512 XFs 1=B Q62702-C2445 Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: BCR512 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR512

Contextual Info: BCR512 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR512

Contextual Info: BCR512 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23

3MA10

Contextual Info: BCR 512 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 512 XFs Pin Configuration 1=B 2=E Package

Contextual Info: BCR512 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7kΩ, R2= 4.7kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

BCR512

Abstract: BCW66
Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2 = 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

NB SOT-23 NPN

Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to

diodes STmicroelectronics marking T01

Abstract: STTA106 STTA106U STTA106RL stta106s
Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

sot-23 marking code Ks

Abstract: TRANSISTOR MARKING CODE XF LDO marking code AL
Contextual Info: ANALO G ► D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

Contextual Info: ANALO G D E V IC E S FEATURES ± 1.2% Accuracy Over Line and Load Regulations @ 25°C U ltralo w Dropout Voltage: 80 m V Typical @ 50 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

STTA106

Abstract: STTA106U diodes STmicroelectronics marking T01 STTA106RL smb le C2631 marking ED smb
Contextual Info: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ c u d SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

switching TRANSISTOR mosfet 30V 40A

Contextual Info: f Z T SGS-THOMSON ^ 7 # M C ^ < m iO T s M K S T T A 2 0 0 6 P(I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 20A V rrm 600V trr (typ) 30ns Vf 1.5V (max) FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode.

Contextual Info: ANALOG D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting

Contextual Info: RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm