TRANSISTOR MARKING P1 GHZ Search Results

BFR92

Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
Contextual Info: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR

BFR92

Abstract: BFR92A BFR92 transistor transistor p2 marking
Contextual Info: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,

transistor s parameters noise

Abstract: NPN planar RF transistor 929 marking 23marking
Contextual Info: S 929 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Case 23 A 3 DIN 41869 SOT 23 Marking: P1 Absolute Maximum Ratings

BFR92R

Abstract: BFR92 transistor bfr92
Contextual Info: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23

Transistor BFR 96

Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Contextual Info: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1

bc238c

Abstract: mosfet marking code AL sot-23 S-691
Contextual Info: TELEFUNKEN ELECTRONIC file D m ÛSSOCHb 0 D0 5 4 2 Ô fi • AL GG S 691 T filLilFyKlKiKl electronic Creative Technologies - 7 ^ 3 / - / 9 Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

S790T

Abstract: transistor k 3728 TRANSISTOR BC 298 sot-143 rf amplifier s790 transistor k 790
Contextual Info: c TELEFUNKEN ELECTRONIC filC D • D 0 DSM 3 S 5 ■ ALGG S 790 T TKLitFtLDKlKtitNl electronic Creative Technologies _ r - * M j Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

S763T

Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm

TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain

TRANSISTOR BC 707

Abstract: CFK40 transistor bf 274 BF 273 transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

transistor bf 271

Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c
Contextual Info: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with

BF 331 TRANSISTORS

Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Contextual Info: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm

CF300

Abstract: 50B4DIN41867 CF-300 telefunken mosfet marking code g1s transistor bf 222
Contextual Info: TELEFUNKEN ELECTRONIC filC D 0029426 A E G CORP • fi^EDDTb 000535*1 81C 0 53 5 9 ~ D CF 300 IFGlQJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

K 3699 transistor

Abstract: 8120D MARKING CFK marking code CFK MOSFET transistor 4-573 CFk12 WMM marking code SOT 23 transistor marking v12 ghz marking code g2s code cfk
Contextual Info: I TELEFUNKEN ELECTRONIC 61C D • 8120D=lt 0005M01 T ■ ALGG 7 = 5 / - SS - ' ¡ n U M M i » electronic CFK12 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common source configuration;

AT-41470

Abstract: NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

41470

Abstract: UHF transistor GHz AT-41470 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

at-41470

Abstract: Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic

ATF-44101

Abstract: transistor marking P1 ghz
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic

5965-8734E

Abstract: max 8734E ATF-45171
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45171 Features • High Output Power: 29.0␣ dBm Typical P 1 dB at 4␣ GHz • High Gain at 1dB Compression: 10.5 dB Typical G1 dB at 4␣ GHz • High Power Efficiency: 38% Typical at 4␣ GHz

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic

P1 260 ATF

Abstract: ATF-45101
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features • High Output Power: 29.0 dBm Typical P1 dB at 4 GHz • High Gain at 1dB Compression: 10.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz • Hermetic Metal-Ceramic

Contextual Info: 2 – 10 GHz Medium Power Gallium Arsenide FET Technical Data ATF-46101 Features • High Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 12.0 dB Typical G1 dB at 4 GHz • High Power Efficiency: 38% Typical at 4 GHz Description

Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic