TRANSISTOR MARKING NA 85 Search Results

8550SG

Abstract: 8550SL transistor 8550S UTC 8550SL 8050S 8550S UTC8550S PNP transistor 8050S pnp low saturation transistor sot23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23 „ DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8550S PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 2 1 SOT-23  DESCRIPTION The UTC 8550S is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier

ZXTP2014Z

Abstract: ZXTP2014ZTA
Contextual Info: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

Marking 3ds sot

Abstract: Q62702-C2532 VPS05604
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code

he 8050s

Abstract: transistor marking B9 MARKING B9 sot-23 8550SL UTC 8550SL
Contextual Info: UNISONIC TECHNOLOGIES CO., 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES 2 1 *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 3 MARKING SOT-23 B9 *Pb-free plating product number: 8550SL

C8550S

Abstract: 8550S 8550SL transistor marking B9
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. 8550S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 3 SOT-23 MARKING *Pb-free plating product number: 8550SL

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

DMN3150L

Abstract: DMN3150L-7
Contextual Info: DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 85mΩ @ VGS = 4.5V, ID = 3.6A RDS(ON) < 115mΩ @ VGS = 2.5V, ID = 3.1A Low Gate Threshold Voltage

LBN150B01-7

Abstract: MMST3904 MMST3906 rce marking
Contextual Info: LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of

VPS05604

Contextual Info: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

H12E

Contextual Info: BC 856U PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197

Marking 3ds sot

Abstract: VPS05604 TRANSISTOR BC 650 c
Contextual Info: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

C2373

Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

DS30749

Abstract: MMST3904 MMST3906 32GZ
Contextual Info: LBN150B01 Lead-free Green 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of

ZXTN25040DFH

Abstract: ZXTP25040DFH ZXTP25040DFHTA
Contextual Info: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to

Contextual Info: CZT955 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT955 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface

2N3866 application note

Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR  FEATURES 1 * VCEV = 80V * High Gain * 20 Amps pulse current TO-220F 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-TF3-T X1049AG-TF3-T X1049AL-T92-B

8AA MARK SOT23

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC849, BC850 • Complement to BC8S6 . BC860 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

2N3866 application note

Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

BC849

Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
Contextual Info: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO

transistor g23 mosfet

Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
Contextual Info: TELEFUNKEN EL EC TR O N I C IALGG BF 996 Marked with: M 96 •¡mmiFMlMIN] electronic Creative Technofogies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially or UHF-tuners Features: • Integrated Gate protection diodes