TRANSISTOR MARKING CODE WTS Search Results
TRANSISTOR MARKING CODE WTS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 |
|
NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR MARKING CODE WTS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
transistor marking code wts
Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
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OCR Scan |
47kflq62702-c2339ot-23transistor marking code wts+4 | |
MARKING CODE T7s
Abstract: MARKINGCODET7s
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OCR Scan |
47kfiot-323fl235b05623st30s+2 | |
transistor marking code wtsContextual Info: BCR 166W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 166W WTs 1=B UPON INQUIRY Package 2=E 3=C SOT-323 |
Original |
ot-323nov-26-1996transistor marking code wts | |
1207AContextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor *Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kfl, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23 Maximum Ratings |
OCR Scan |
q62702-c2339ot-23be35b05s35b05+2 | |
transistor marking code wts
Abstract: sot-23 WTs sot-23 marking WTs Q62702-C2339
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Original |
q62702-c2339ot-23nov-26-1996transistor marking code wts+2 | |
transistor marking code wts
Abstract: transistor marking code wts 15
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Original |
bcr166bcr166/f/l3bcr166t/weha07183+7 | |
transistor marking code wts
Abstract: BCR108T BCR166 BCR166F BCR166L3 BCR166T BCR166W SC75 STP8
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Original |
bcr166bcr166/f/l3bcr166t/weha07183+9 | |
transistor marking code wts
Abstract: Marking W1s
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Original |
bcr48pneha07193eha07176ot-363+3 | |
transistor digital 47k 22k PNP NPNContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
Original |
bcr48pnot-363eha07176eha07193+2 | |
transistor marking code wtsContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
Original |
bcr48pnot-363eha07176eha07193+2 | |
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Contextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 2 3 Transistors in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ |
Original |
bcr48pnot-363eha07176eha07193 | |
infineon marking W1s
Abstract: transistor marking code wts BCR108S BCR48PN marking code w1s
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Original |
bcr48pnot-363eha07176eha07193+4 | |
transistor marking code wtsContextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3 |
Original |
bcr166bcr166weha07183dissipationbcr166+2 | |
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Contextual Info: BCR166. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ , R2 = 47 kΩ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCR166 BCR166W C 3 |
Original |
bcr166bcr166weha07183ot323 | |
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transistor marking code wtsContextual Info: BCR48PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two galvanic internal isolated NPN/PNP Transistors in one package Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k |
Original |
bcr48pnvps05604eha07193ot-363+3 | |
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Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2 |
OCR Scan |
47ki2q62702-c2496ot-363235lq5+3 | |
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Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation |
OCR Scan |
ot-363q62702-c2495 | |
transistor bc 577
Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
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OCR Scan |
47ki2q62702-c2496ot-363transistor bc 577+8 | |
transistor marking code wts
Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
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Original |
q62702-c2496ot-363dec-09-1996transistor marking code wts+4 | |
IC 7481 pin configurationContextual Info: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction |
OCR Scan |
16/sclkki-9711gd37fi7fiic 7481 pin configuration | |
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Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary |
Original |
hy27sshy27us256mbit32mx8bit+2 | |
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Contextual Info: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary |
Original |
hy27sshy27us256mbit32mx8bit+3 | |
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Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 |
Original |
hy27uahy27sa128mx8bit64mx16bit | |
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Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 |
Original |
hy27uahy27sa128mx8bit64mx16bit+1 | |