TRANSISTOR MARKING CODE H11S Search Results
TRANSISTOR MARKING CODE H11S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR MARKING CODE H11S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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transistor marking code H11S
Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
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ra05h9595m952-954mhz954-mhztransistor marking code h11s+6 | |
transistor marking code H11S
Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
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ra13h8891mb880-915mhz13-watt915-mhz+5 | |
transistor marking code H11S
Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S
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ra05h8693m866-928mhz928mhztransistor marking code h11s+3 | |
transistor marking code H11S
Abstract: H11S RA06H8285M
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ra06h8285m820-851mhz851-mhztransistor marking code h11s+1 | |
f953
Abstract: H11S RA05H9595M RA05H9595M-101
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ra05h9595m952-954mhz954-mhzf953+2 | |
H11S
Abstract: RA05H9595M RA05H9595M-101
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ra05h9595m952-954mhz954-mhzh11s+1 | |
H11S
Abstract: RA05H8693M RA05H8693M-101
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ra05h8693m866-928mhz928mhzh11s+1 | |
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Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the |
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ra06h8285m820-851mhz851-mhz | |
MARKING CODE 13w
Abstract: 13W MARKING
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ra13h8891mb880-915mhz13-watt915-mhz+3 | |
RA13H8891MB-101
Abstract: H11S MOSFET Power Amplifier Module 900Mhz
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ra13h8891mb880-915mhz13-watt915-mhz+3 | |
MOSFET Power Amplifier Module 900Mhz
Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
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ra13h8891mb880-915mhz13-watt915-mhz+4 | |
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Contextual Info: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the |
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ra13h8891mb880-915mhz13-watt915-mhz | |
marking CODE H11S
Abstract: H11S RA06H8285M MOSFET Amplifier Module transistor marking code H11S transistor marking code 12W 12
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ra06h8285m820-851mhz851-mhzmarking code h11s+4 | |
H11S
Abstract: RA06H8285M MOSFET Amplifier Module
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ra06h8285m820-851mhz851-mhzh11s+1 | |
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RA06H8285M-101
Abstract: H11S marking CODE H11S
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ra06h8285m820-851mhz851-mhzoct2011+3 | |