TRANSISTOR MARKING CODE EY Search Results

MOTOROLA DATE CODE transistor

Abstract: motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709 MSB709-RT1 MSB709-ST1 marking code ER transistor
Contextual Info: Order this dats sheet by MSB709-RTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB709-RTI* PNP Silicon General Purpose Amplifier Transistor MSB709=STI This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power

phototransistor 650 nm

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

transistor d-331

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

PAM3101DAB

Abstract: PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280
Contextual Info: PAM3101 300mA High PSRR Low Dropout CMOS Linear Regulator Features General Description n Low Dropout Voltage: 180mV@300mA V O=3.3V n Output Voltage Accuracy within ±2% n Quiescent Current : 65 A Typ. n High PSRR: 70dB@1kHz n Excellent Line and Load Regulation

phototransistor 650 nm

Abstract: phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar

68HC11

Abstract: MAX6314 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315 MAX811
Contextual Info: 19-1090; Rev 2; 12/05 68HC11/Bidirectional-Compatible µP Reset Circuit The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly

74HC0

Abstract: 68HC11 MAX6314 MAX6314US45D1-T MAX6314US46D1-T MAX6314US47D1-T MAX6314US48D1-T MAX6314US49D1-T MAX6314US50D1-T MAX6315
Contextual Info: 19-1090; Rev 2; 12/05 68HC11/Bidirectional-Compatible µP Reset Circuit The MAX6314 low-power CMOS microprocessor µP supervisory circuit is designed to monitor power supplies in µP and digital systems. The MAX6314’s RESET output is bidirectional, allowing it to be directly

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE

phototransistor 650 nm

Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

2N7368

Abstract: MC 3041
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 22 January 1998 INCH-POUND MIL-PRF-19500/622A 22 October 1997 SUPERSEDING MIL-S-19500/622 5 April 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

Contextual Info: LD6911 1/1/2007 300mA, Low Noise, Ultra-Fast CMOS LDO Regulator REV: 00a General Description Features The LD6911 is a micropower linear regulator, featuring z Shutdown current <1 A low-noise, low-dropout and high ripple rejection ration. The z Ultra-Fast Response in Load Transient

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features

transistor 495

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

transistor 495

Abstract: GEX06630 GEX06971 Q62702-P5054 OHF00328 SFH495P
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen

2n7226

Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

fototransistor BPW 39

Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.

OPTOCOUPLER tl 521

Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6
Contextual Info: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.

TK11830

Contextual Info: iîSÏTOKO T K 1 1 8 3 0 POSITIVE-TO-NEGATIVE DC/DC CONVERTER FEATURES APPLICATIONS • Positive-to-Negative Converter ■ Pagers ■ Adjustable Output Voltage ■ Cassette Recorders ■ On/Off Control Function ■ Cordless Telephones ■ Thermal Protection Sensor

transistor d 331

Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten

MOSFET TRANSISTOR SMD MARKING CODE 545

Abstract: 2N7236 equivalent number of smd transistor of 1448 2N7236 JANTX smd diode code BL p-channel mosfet BL
Contextual Info: 2N7236 Qualified Levels: JAN, JANTX, and JANTXV P-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/595 DESCRIPTION This 2N7236 switching transistor is military qualified up to the JANTXV level for high-reliability applications. This device is also available in a low profile U surface mount package.

Contextual Info: 2N7370 Available on commercial versions NPN Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/624 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power NPN transistor is rated at 12 amps and is military qualified up to the JANTXV

Contextual Info: 2N7371 Available on commercial versions PNP Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/623 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power PNP transistor is rated at 12 amps and is military qualified up to the JANTXV

2N7373

Abstract: 2N7373 transistor 2N5004
Contextual Info: INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,