TRANSISTOR MARKING CODE 24 Search Results

STS9013

Abstract: Transistor TRANSISTOR 246 F 9016 transistor 9016 transistor transistor 9016 npn 9016 STS9012 transistor 9016 kst9016
Contextual Info: STS9013 Semiconductor NPN Silicon Transistor Descriptions • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking Package Code STS9013

KSB1121

Abstract: KSD1621
Contextual Info: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code

SOT 23 CODE MCS

Abstract: transistor marking MCs Q62702-F940 bfs 11 SOT 23 marking MCS
Contextual Info: BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration BFS 17P MCs 1=B Q62702-F940 2=E Package 3=C SOT-23 Maximum Ratings of any single Transistor

DP500F

Abstract: Transistor DN500
Contextual Info: DP500F Semiconductor PNP Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN500 Switching Application Ordering Information Type NO. Marking DP500F Package Code P5

D1758

Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
Contextual Info: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)

Contextual Info: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

STMicroelectronics DPAK Marking CODE

Abstract: BULD1101E BULD1101ET4
Contextual Info: BULD1101ET4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULD1101ET4 BULD1101E Tape & Reel HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR

30227

Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

Q62702-F1314

Contextual Info: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Transistor BFR 38

Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Contextual Info: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFP 181R

Abstract: IC 7449 Q62702-F1685 SIEMENS marking
Contextual Info: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking 93A

Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
Contextual Info: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

IC 2272

Abstract: Q62702-F1502
Contextual Info: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q1205

Abstract: ss92 BSS92 transistor sS92 siemens ss92
Contextual Info: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking

transistor marking code wts

Abstract: sot-23 marking WTs transistor marking code wts 15 sot-23 WTs WTs transistor
Contextual Info: SIEMENS BCR 166 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=4.7ki2, R2=47kfl Type Marking Ordering Code Pin Configuration BCR 166 WTs 1=B Q62702-C2339 Package 2=E 3=C SOT-23

transistor d 1825 7c

Abstract: CE040
Contextual Info: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 70 S2C Q62702-M0003

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

Contextual Info: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM

Transistor BFR 91

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 91 • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 91 BFR 91

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

c 129 transistor

Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
Contextual Info: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel