TRANSISTOR MARKING CODE 1P Search Results

STD13005

Contextual Info: STD13005 Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code

Contextual Info: STD13005FC Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control PIN Connection C B Ordering Information Type NO. Marking Package Code

Contextual Info: STD13005F Semiconductor NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS PIN Connection Features • High speed switching • VCEO sus =400V • Suitable for Switching Regulator and Motor Control C B Ordering Information Type NO. Marking Package Code

Contextual Info: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

diode U3d

Abstract: diode marking code 777 diode U3d on PL360D u3d diode Transil diodes diode MARKING CODE U3D
Contextual Info: Æ T SGS-THOMSON ì* [ S & [ i ¥ [e m d PL360D (§ ì TRANSIL FEATURES • ■ . ■ > PEAK PULSE POWER= 300 W <§> 1ms. BREAKDOWN VOLTAGE = 330 V min. UNIDIRECTIONAL TRANS IL. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR . DESCRIPTION

transistor marking 44 sot23

Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
Contextual Info: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most

Contextual Info: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77

transistor 21 2u

Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
Contextual Info: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
Contextual Info: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB

Contextual Info: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00)

Contextual Info: Small Signal Transistor MMBT2222A-HF NPN RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic.

DI210

Contextual Info: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. (6) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2 (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77

transistor bc 237c

Abstract: 629t
Contextual Info: ii TELEFUNKEN ELECTRONIC : 1 ?E D • ô 'të O O 'ib DOCHbCH S 627T •S 628T- S 629T TftKUKFOiMKIlK] electronic C rttb ve 1êeftnotog*e$ T -3 3 -O S' Silicon NPN Epitaxial Planar Power Transistors Applications: General at high supply voltages Features: • High reverse voltages

DTA124E

Abstract: T110
Contextual Info: IMB5A Transistors General purpose dual digital transistors IMB5A zExternal dimensions (Unit : mm) zFeature 1) Two DTA124E chips in a UMT or SMT package. IC(MAX) Pd °C V mA mA mW ∗ ROHM : SMT6 EIAJ : SC-74 2.9 1.9 0.95 0.95 (1) 0.3Min. 1.1 IO 1pin mark

transistor 1PC

Abstract: CMST2222A ic 455 marking 1PC
Contextual Info: CMST2222A SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small

transistor 1PC

Abstract: marking 1PC
Contextual Info: Central CMST2222A TM Semiconductor Corp. SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small

TRANSISTOR code marking 1P 3

Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

transistor 1PC

Abstract: CMST2222A 1pc marking
Contextual Info: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general

Contextual Info: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general

LB-215

Contextual Info: Central CMST2222A SURFACE MOUNT SUPERmini NPN SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,

Contextual Info: Central" CMST2222A Semiconductor Corp. SUPERmmi NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,