TRANSISTOR MARKING BOS Search Results

Contextual Info: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

BQ 15 Transistor

Abstract: marking 601 sot transistor bf 222 Electronic car ignition circuit
Contextual Info: TELEFUNKEN ELECTRONIC 17E i> m f l ^ o c n b ooo^bos s • AL66 . S 601 T ■¡mUlFIUJlMKil?! electronic Ctmuv « IfechnoioQtM T -3 3 -a ? Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application

DIN 3021-3 STANDARD

Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Contextual Info: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6

13006 TRANSISTOR

Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

PMBFJ620,115

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

PMBFJ620

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D evices This new series of digital transistors is designed to replace a single device

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117

g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs

transistor npn 12V 1A Collector Current

Abstract: 2SC3053 uj01
Contextual Info: SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION . 2SC3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING -, c +0-5 2 5 -0.3 designed for high frequency amplify, oscillating, frequency exchange, medium

t056

Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
Contextual Info: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network

Contextual Info: STTA512D/F/B TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V trr (typ) 45ns V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

FZ74

Abstract: dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105 TC105303ECT
Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A

Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

MCD656

Abstract: LWE2025R
Contextual Info: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

t1p42

Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
Contextual Info: TC57 Series Linear Regulator Controller FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation and often